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1. WO2020030504 - OPTOELECTRONIC COMPONENT HAVING A MULTIFUNCTIONAL COVER LAYER AND CORRESPONDING PRODUCTION METHOD

Publication Number WO/2020/030504
Publication Date 13.02.2020
International Application No. PCT/EP2019/070670
International Filing Date 31.07.2019
IPC
H01L 33/48 2010.01
HELECTRICITY
01BASIC ELECTRIC ELEMENTS
LSEMICONDUCTOR DEVICES; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
33Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
48characterised by the semiconductor body packages
H01L 33/60 2010.01
HELECTRICITY
01BASIC ELECTRIC ELEMENTS
LSEMICONDUCTOR DEVICES; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
33Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
48characterised by the semiconductor body packages
58Optical field-shaping elements
60Reflective elements
H01L 33/62 2010.01
HELECTRICITY
01BASIC ELECTRIC ELEMENTS
LSEMICONDUCTOR DEVICES; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
33Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
48characterised by the semiconductor body packages
62Arrangements for conducting electric current to or from the semiconductor body, e.g. leadframe, wire-bond or solder balls
H01L 33/44 2010.01
HELECTRICITY
01BASIC ELECTRIC ELEMENTS
LSEMICONDUCTOR DEVICES; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
33Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
44characterised by the coatings, e.g. passivation layer or anti-reflective coating
H01L 33/50 2010.01
HELECTRICITY
01BASIC ELECTRIC ELEMENTS
LSEMICONDUCTOR DEVICES; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
33Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
48characterised by the semiconductor body packages
50Wavelength conversion elements
H01L 33/52 2010.01
HELECTRICITY
01BASIC ELECTRIC ELEMENTS
LSEMICONDUCTOR DEVICES; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
33Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
48characterised by the semiconductor body packages
52Encapsulations
CPC
H01L 2933/0058
HELECTRICITY
01BASIC ELECTRIC ELEMENTS
LSEMICONDUCTOR DEVICES; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
2933Details relating to devices covered by the group H01L33/00 but not provided for in its subgroups
0008Processes
0058relating to optical field-shaping elements
H01L 2933/0066
HELECTRICITY
01BASIC ELECTRIC ELEMENTS
LSEMICONDUCTOR DEVICES; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
2933Details relating to devices covered by the group H01L33/00 but not provided for in its subgroups
0008Processes
0066relating to arrangements for conducting electric current to or from the semiconductor body
H01L 2933/0091
HELECTRICITY
01BASIC ELECTRIC ELEMENTS
LSEMICONDUCTOR DEVICES; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
2933Details relating to devices covered by the group H01L33/00 but not provided for in its subgroups
0091Scattering means in or on the semiconductor body or semiconductor body package
H01L 33/44
HELECTRICITY
01BASIC ELECTRIC ELEMENTS
LSEMICONDUCTOR DEVICES; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
33Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
44characterised by the coatings, e.g. passivation layer or anti-reflective coating
H01L 33/486
HELECTRICITY
01BASIC ELECTRIC ELEMENTS
LSEMICONDUCTOR DEVICES; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
33Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
48characterised by the semiconductor body packages
483Containers
486adapted for surface mounting
H01L 33/50
HELECTRICITY
01BASIC ELECTRIC ELEMENTS
LSEMICONDUCTOR DEVICES; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
33Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
48characterised by the semiconductor body packages
50Wavelength conversion elements
Applicants
  • OSRAM OLED GMBH [DE/DE]; Leibnizstraße 4 93055 Regensburg, DE
Inventors
  • TANGRING, Ivar; DE
  • LAMFALUSI, Tamas; DE
Agents
  • ZACCO PATENTANWALTS- UND RECHTSANWALTSGESELLSCHAFT MBH; Bayerstr. 83 80355 München, DE
Priority Data
10 2018 119 444.709.08.2018DE
Publication Language German (DE)
Filing Language German (DE)
Designated States
Title
(DE) OPTOELEKTRONISCHES BAUELEMENT MIT MULTIFUNKTIONALER ABDECKSCHICHT UND ENTSPRECHENDES HERSTELLUNGSVERFAHREN
(EN) OPTOELECTRONIC COMPONENT HAVING A MULTIFUNCTIONAL COVER LAYER AND CORRESPONDING PRODUCTION METHOD
(FR) COMPOSANT OPTOÉLECTRONIQUE COMPORTANT UNE COUCHE DE RECOUVREMENT MULTIFONCTIONNELLE ET PROCÉDÉ DE FABRICATION CORRESPONDANT
Abstract
(DE)
Optoelektronisches Bauelement (2), aufweisend: ein Gehäuse (4) mit einer darin befindlichen Kavität (12), wobei die Kavität (12) folgendes umfasst: a) einen Boden (18), b) eine dem Boden (18) gegenüberliegende Lichtaustrittsöffnung (24), und c) eine den Boden (18) zumindest teilweise bedeckende metallische Spiegelschicht (16), die zur Lichtspiegelung hin zur Lichtaustrittsöffnung (24) dient; eine in der Kavität (12) befindliche elektrische Lichtquelle (6), wie z.B. einen LED-Chip, mit einer zur Lichtaustrittsöffnung (24) gewandten Kontaktseite (26) und einer auf dem Boden (18) befestigten Befestigungsseite (28); eine Füllschicht (8), in welcher die elektrische Lichtquelle (6) eingebettet ist und welche die Kavität (12) ausfüllt; und eine die metallische Spiegelschicht (16) bedeckende Abdeckschicht (10), dadurch gekennzeichnet, dass die Abdeckschicht (10) zumindest eine Schicht umfasst, die aus Magnesiumfluorid besteht.
(EN)
The invention relates to an optoelectronic component (2), comprising: a housing (4) having a cavity (12) located therein, the cavity (12) comprising the following: a) a bottom (18), b) a light exit opening (24) opposite the bottom (18), and c) a metal mirror layer (16), which at least partly covers the bottom (18) and which is used to reflect light toward the light exit opening (24); an electrical light source (6), e.g. an LED chip, which is located in the cavity (12) and has a contact side (26) facing the light exit opening (24) and a fastening side (28) fastened to the bottom (18); a filling layer (8), in which the electrical light source (6) is embedded and which fills the cavity (12); and a cover layer (10), which covers the metal mirror layer (16), characterized in that the cover layer (10) comprises at least one layer consisting of magnesium fluoride.
(FR)
L'invention concerne un composant opto-électronique (2), présentant : un boîtier (4) dans lequel est située une cavité (12), la cavité (12) comprenant les éléments suivants : a) un fond (18), b) une ouverture de sortie de lumière (24) opposée au fond (18), et c) une couche réfléchissante métallique (16) qui recouvre au moins en partie le fond (18) et qui sert à réfléchir la lumière en direction de l'ouverture de sortie de lumière (24) ; une source de lumière électrique (6) se trouvant dans la cavité (12), telle que par exemple une puce à DEL, pourvue d'une face de contact (26) tournée vers l'ouverture de sortie de lumière (24) et d'une face de fixation (28) fixée sur le fond (18) ; une couche de remplissage (8), dans laquelle la source de lumière électrique (6) est intégrée et laquelle remplit la cavité (12) ; et une couche de recouvrement (10) recouvrant la couche réfléchissante métallique (16). L'invention est caractérisée en ce que la couche de recouvrement (10) comporte au moins une couche, qui est constituée de fluorure de magnésium.
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