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1. WO2011025045 - GRAPHENE FILM AND METHOD FOR PRODUCING SAME

Publication Number WO/2011/025045
Publication Date 03.03.2011
International Application No. PCT/JP2010/064848
International Filing Date 31.08.2010
Chapter 2 Demand Filed 30.06.2011
IPC
C01B 31/04 2006.01
CCHEMISTRY; METALLURGY
01INORGANIC CHEMISTRY
BNON-METALLIC ELEMENTS; COMPOUNDS THEREOF
31Carbon; Compounds thereof
02Preparation of carbon; Purification
04Graphite
CPC
B82Y 30/00
BPERFORMING OPERATIONS; TRANSPORTING
82NANOTECHNOLOGY
YSPECIFIC USES OR APPLICATIONS OF NANOSTRUCTURES; MEASUREMENT OR ANALYSIS OF NANOSTRUCTURES; MANUFACTURE OR TREATMENT OF NANOSTRUCTURES
30Nanotechnology for materials or surface science, e.g. nanocomposites
B82Y 40/00
BPERFORMING OPERATIONS; TRANSPORTING
82NANOTECHNOLOGY
YSPECIFIC USES OR APPLICATIONS OF NANOSTRUCTURES; MEASUREMENT OR ANALYSIS OF NANOSTRUCTURES; MANUFACTURE OR TREATMENT OF NANOSTRUCTURES
40Manufacture or treatment of nanostructures
C01B 2204/02
CCHEMISTRY; METALLURGY
01INORGANIC CHEMISTRY
BNON-METALLIC ELEMENTS; COMPOUNDS THEREOF; ; METALLOIDS OR COMPOUNDS THEREOF NOT COVERED BY SUBCLASS C01C
2204Structure or properties of graphene
02Single layer graphene
C01B 2204/04
CCHEMISTRY; METALLURGY
01INORGANIC CHEMISTRY
BNON-METALLIC ELEMENTS; COMPOUNDS THEREOF; ; METALLOIDS OR COMPOUNDS THEREOF NOT COVERED BY SUBCLASS C01C
2204Structure or properties of graphene
04Specific amount of layers or specific thickness
C01B 2204/32
CCHEMISTRY; METALLURGY
01INORGANIC CHEMISTRY
BNON-METALLIC ELEMENTS; COMPOUNDS THEREOF; ; METALLOIDS OR COMPOUNDS THEREOF NOT COVERED BY SUBCLASS C01C
2204Structure or properties of graphene
20Graphene characterized by its properties
32Size or surface area
C01B 32/188
CCHEMISTRY; METALLURGY
01INORGANIC CHEMISTRY
BNON-METALLIC ELEMENTS; COMPOUNDS THEREOF; ; METALLOIDS OR COMPOUNDS THEREOF NOT COVERED BY SUBCLASS C01C
32Carbon; Compounds thereof
15Nano-sized carbon materials
182Graphene
184Preparation
188by epitaxial growth
Applicants
  • 国立大学法人九州大学 KYUSHU UNIVERSITY [JP]/[JP] (AllExceptUS)
  • 吾郷 浩樹 AGO Hiroki [JP]/[JP] (UsOnly)
  • 伊藤 由人 ITO Yoshito [JP]/[JP] (UsOnly)
  • 田中 伊豆美 TANAKA Izumi [JP]/[JP] (UsOnly)
  • 水野 清義 MIZUNO Seigi [JP]/[JP] (UsOnly)
  • 辻 正治 TSUJI Masaharu [JP]/[JP] (UsOnly)
Inventors
  • 吾郷 浩樹 AGO Hiroki
  • 伊藤 由人 ITO Yoshito
  • 田中 伊豆美 TANAKA Izumi
  • 水野 清義 MIZUNO Seigi
  • 辻 正治 TSUJI Masaharu
Agents
  • 西澤 利夫 NISHIZAWA Toshio
Priority Data
2009-20098231.08.2009JP
2010-04593002.03.2010JP
Publication Language Japanese (JA)
Filing Language Japanese (JA)
Designated States
Title
(EN) GRAPHENE FILM AND METHOD FOR PRODUCING SAME
(FR) FILM DE GRAPHÈNE, ET PROCÉDÉ DE PRODUCTION CORRESPONDANT
(JA) グラフェン薄膜とその製造方法
Abstract
(EN)
Disclosed is a novel method for producing a graphene film suitable for industrial use such as application to electronics, whereby a graphene film having a large area, high homogeneity and small domain boundary or a graphene film having well-aligned crystal orientations can be produced at a low cost. Also disclosed is a graphene film. The aforesaid method for producing a graphene film comprises using a substrate provided with an epitaxial metal film that is formed on the surface of a single-crystal substrate, and contacting a carbon material with the surface of the epitaxial metal film to thereby allow the growth of a graphene film. In the aforesaid graphene film which consists of a number of graphene domains, the area of each domain is 0.000001 μm2 to 100000 mm2 and the orientations of 6-membered cycles in the domains are averagely aligned in a single direction all over the graphene film.
(FR)
La présente invention concerne un procédé de production d'un film de graphène destiné à l'industrie, notamment l'industrie des produits électroniques. Ce procédé permet de produire à faible coût un film de graphène de grande superficie, très homogène, et présentant une petite limite entre domaines, ou un film de graphène dont les cristaux sont bien alignés dans la même direction. L'invention concerne également un tel film de graphène. Ce procédé de production de film de graphène consiste à utiliser un substrat pourvu d'un film de métal épitaxial réalisé sur la surface d'un substrat monocristallin, et à mettre la surface de ce film de métal épitaxial en contact d'un matériau carboné de façon à permettre la croissance d'un film de graphène. Dans ce film de graphène, qui est constitué de nombreux domaines de graphène, la superficie de chaque domaine va de 0,000001 μm2 à 100000 mm2, et les orientations des noyaux de 6 chaînons dans les domaines présentent, sur toute l'étendue du film de graphène, un alignement moyen selon un seul axe.
(JA)
 大面積で、均質かつドメインバンダリーの少ないグラフェン薄膜、さらには結晶方位の向きが揃ったグラフェン薄膜を安価に製造することができる、エレクトロニクスへの応用などの工業的な利用に適した新規なグラフェン薄膜の製造方法とグラフェン薄膜を提供する。 本発明のグラフェン薄膜の製造方法では、単結晶基板の表面にエピタキシャルな金属膜を成膜した基板を用いて、このエピタキシャルな金属膜の表面に炭素原料を接触させることによりグラフェン薄膜を成長させる。また、本発明のグラフェン薄膜は、グラフェン薄膜が多数のグラフェンドメインから構成され、各ドメインの面積が0.000001μm2~100000mm2であり、かつドメイン内の六員環の方位がグラフェン薄膜全体にわたって平均的に同一方向を向いている。
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