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1. CN111081904 - Preparation method of graphene oxide film, OLED device and preparation method

Office
China
Application Number 201911210605.2
Application Date 02.12.2019
Publication Number 111081904
Publication Date 28.04.2020
Publication Kind A
IPC
H01L 51/56
HELECTRICITY
01BASIC ELECTRIC ELEMENTS
LSEMICONDUCTOR DEVICES; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
51Solid state devices using organic materials as the active part, or using a combination of organic materials with other materials as the active part; Processes or apparatus specially adapted for the manufacture or treatment of such devices, or of parts thereof
50specially adapted for light emission, e.g. organic light emitting diodes (OLED) or polymer light emitting devices (PLED)
56Processes or apparatus specially adapted for the manufacture or treatment of such devices or of parts thereof
H01L 51/50
HELECTRICITY
01BASIC ELECTRIC ELEMENTS
LSEMICONDUCTOR DEVICES; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
51Solid state devices using organic materials as the active part, or using a combination of organic materials with other materials as the active part; Processes or apparatus specially adapted for the manufacture or treatment of such devices, or of parts thereof
50specially adapted for light emission, e.g. organic light emitting diodes (OLED) or polymer light emitting devices (PLED)
CPC
H01L 51/0003
HELECTRICITY
01BASIC ELECTRIC ELEMENTS
LSEMICONDUCTOR DEVICES; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
51Solid state devices using organic materials as the active part, or using a combination of organic materials with other materials as the active part; Processes or apparatus specially adapted for the manufacture or treatment of such devices, or of parts thereof
0001Processes specially adapted for the manufacture or treatment of devices or of parts thereof
0002Deposition of organic semiconductor materials on a substrate
0003using liquid deposition, e.g. spin coating
H01L 51/0007
HELECTRICITY
01BASIC ELECTRIC ELEMENTS
LSEMICONDUCTOR DEVICES; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
51Solid state devices using organic materials as the active part, or using a combination of organic materials with other materials as the active part; Processes or apparatus specially adapted for the manufacture or treatment of such devices, or of parts thereof
0001Processes specially adapted for the manufacture or treatment of devices or of parts thereof
0002Deposition of organic semiconductor materials on a substrate
0003using liquid deposition, e.g. spin coating
0007characterised by the solvent
H01L 51/5056
HELECTRICITY
01BASIC ELECTRIC ELEMENTS
LSEMICONDUCTOR DEVICES; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
51Solid state devices using organic materials as the active part, or using a combination of organic materials with other materials as the active part; Processes or apparatus specially adapted for the manufacture or treatment of such devices, or of parts thereof
50specially adapted for light emission, e.g. organic light emitting diodes [OLED] or polymer light emitting devices [PLED]
5048Carrier transporting layer
5056Hole transporting layer
H01L 51/5088
HELECTRICITY
01BASIC ELECTRIC ELEMENTS
LSEMICONDUCTOR DEVICES; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
51Solid state devices using organic materials as the active part, or using a combination of organic materials with other materials as the active part; Processes or apparatus specially adapted for the manufacture or treatment of such devices, or of parts thereof
50specially adapted for light emission, e.g. organic light emitting diodes [OLED] or polymer light emitting devices [PLED]
5088Carrier injection layer
B05D 1/005
BPERFORMING OPERATIONS; TRANSPORTING
05SPRAYING OR ATOMISING IN GENERAL; APPLYING FLUENT MATERIALS TO SURFACES, IN GENERAL
DPROCESSES FOR APPLYING FLUENT MATERIALS TO SURFACES, IN GENERAL
1Processes for applying liquids or other fluent materials
002the substrate being rotated
005Spin coating
B05D 5/12
BPERFORMING OPERATIONS; TRANSPORTING
05SPRAYING OR ATOMISING IN GENERAL; APPLYING FLUENT MATERIALS TO SURFACES, IN GENERAL
DPROCESSES FOR APPLYING FLUENT MATERIALS TO SURFACES, IN GENERAL
5Processes for applying liquids or other fluent materials to surfaces to obtain special surface effects, finishes or structures
12to obtain a coating with specific electrical properties
Applicants WUHAN CHINA STAR OPTOELECTRONICS SEMICONDUCTOR DISPLAY TECHNOLOGY CO., LTD.
武汉华星光电半导体显示技术有限公司
Inventors WANG YAMIN
汪亚民
Agents 深圳紫藤知识产权代理有限公司 44570
Title
(EN) Preparation method of graphene oxide film, OLED device and preparation method
(ZH) 氧化石墨烯薄膜的制备方法、OLED器件及制备方法
Abstract
(EN)
The invention discloses a preparation method of a graphene oxide film, an OLED device and a preparation method. The OLED device comprises a substrate, an anode, a hole injection layer, a hole transport layer, a light emitting layer, an electron transport layer, an electron injection layer and a cathode which are arranged in a stacked mode. The hole injection layer is a graphene oxide layer with the concentration ranging from 0.3 mg/ml to 1mg/ml; the hole transport layer is any one of N, N'-diphenyl-N, N'-di (3-tolyl)-1, 1'-biphenyl-4, 4'-diamine, 1, 4-di(diphenylamino) biphenyl and N, N'-diphenyl-N, N'-di (1-naphthyl)-1, 1'-biphenyl-4, 4'-diamine.

(ZH)
本申请公开了一种氧化石墨烯薄膜的制备方法、一种OLED器件及制备方法,其中,所述OLED器件包括层叠设置的基底、阳极、空穴注入层、空穴传输层、发光层、电子传输层、电子注入层以及阴极,所述空穴注入层为浓度范围为0.3~1mg/ml的氧化石墨烯层,所述空穴传输层为N,N′‑二苯基‑N,N′‑二(3‑甲苯基)‑1,1′‑联苯‑4,4′‑二胺、1,4‑二(二苯胺基)联苯以及N,N′‑二苯基‑N,N′‑二(1‑萘基)‑1,1′‑联苯‑4,4′‑二胺中的任意一种。

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