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1. WO2022126309 - SEMICONDUCTOR DEVICE STRUCTURES AND METHODS OF MANUFACTURING THE SAME

Publication Number WO/2022/126309
Publication Date 23.06.2022
International Application No. PCT/CN2020/136048
International Filing Date 14.12.2020
IPC
H01L 29/778 2006.1
HELECTRICITY
01BASIC ELECTRIC ELEMENTS
LSEMICONDUCTOR DEVICES; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
29Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having at least one potential-jump barrier or surface barrier; Capacitors or resistors with at least one potential-jump barrier or surface barrier, e.g. PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof
66Types of semiconductor device
68controllable by only the electric current supplied, or only the electric potential applied, to an electrode which does not carry the current to be rectified, amplified, or switched
76Unipolar devices
772Field-effect transistors
778with two-dimensional charge carrier gas channel, e.g. HEMT
H01L 21/335 2006.1
HELECTRICITY
01BASIC ELECTRIC ELEMENTS
LSEMICONDUCTOR DEVICES; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
21Processes or apparatus specially adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
02Manufacture or treatment of semiconductor devices or of parts thereof
04the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer, carrier concentration layer
18the devices having semiconductor bodies comprising elements of group IV of the Periodic System or AIIIBV compounds with or without impurities, e.g. doping materials
334Multistep processes for the manufacture of devices of the unipolar type
335Field-effect transistors
Applicants
  • INNOSCIENCE (SUZHOU) TECHNOLOGY CO., LTD. [CN]/[CN]
Inventors
  • ZHANG, Anbang
  • WONG, King Yuen
Agents
  • IDEA INTELLECTUAL (SHENZHEN) IP AGENCY
Priority Data
Publication Language English (en)
Filing Language English (EN)
Designated States
Title
(EN) SEMICONDUCTOR DEVICE STRUCTURES AND METHODS OF MANUFACTURING THE SAME
(FR) STRUCTURES DE DISPOSITIF À SEMI-CONDUCTEUR ET LEURS PROCÉDÉS DE FABRICATION
Abstract
(EN) Semiconductor device structures (1a,1b,1c,1d) and methods for manufacturing the same are provided. The semiconductor device structure (1a,1b,1c,1d) includes a substrate (10), a first nitride semiconductor layer, a second nitride semiconductor layer, a gate structure (61), a first spacer, a second spacer and a drain electrode (63). The first nitride semiconductor layer is disposed on the substrate (10). The second nitride semiconductor layer is disposed on the first nitride semiconductor layer. The gate structure (61) is disposed on the second nitride semiconductor layer. The first spacer is disposed adjacent to a first surface of the gate structure (61). The second spacer is disposed adjacent to a second surface of the gate structure (61). The drain electrode (63) is disposed relatively adjacent to the second spacer than the first spacer. The first spacer has a first length, and the second spacer has a second length greater than the first length along the first direction.
(FR) L'invention concerne des structures de dispositif à semi-conducteur (1a, 1b, 1c, 1d) et ses procédés de fabrication. La structure de dispositif à semi-conducteur (1a, 1b, 1c, 1d) comprend un substrat (10), une première couche semi-conductrice au nitrure, une seconde couche semi-conductrice au nitrure, une structure de grille (61), un premier espaceur, un second espaceur et une électrode de drain (63). La première couche semi-conductrice au nitrure est disposée sur le substrat (10). La seconde couche semi-conductrice au nitrure est disposée sur la première couche semi-conductrice au nitrure. La structure de grille (61) est disposée sur la seconde couche semi-conductrice au nitrure. Le premier espaceur est disposé adjacent à une première surface de la structure de grille (61). Le second espaceur est disposé de manière adjacente à une seconde surface de la structure de grille (61). L'électrode de drain (63) est disposée relativement adjacente au second espaceur que le premier espaceur. Le premier espaceur a une première longueur, et le second espaceur a une seconde longueur supérieure à la première longueur le long de la première direction.
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