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1. WO2021110416 - OVERLAY MEASUREMENT SYSTEM USING LOCK-IN AMPLIFIER TECHNIQUE

Publication Number WO/2021/110416
Publication Date 10.06.2021
International Application No. PCT/EP2020/082575
International Filing Date 18.11.2020
IPC
G03F 7/20 2006.01
GPHYSICS
03PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
FPHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
7Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printed surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
20Exposure; Apparatus therefor
G03F 9/00 2006.01
GPHYSICS
03PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
FPHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
9Registration or positioning of originals, masks, frames, photographic sheets or textured or patterned surfaces, e.g. automatically
CPC
G03F 7/70633
GPHYSICS
03PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
FPHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR;
7Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
70Exposure apparatus for microlithography
70483Information management, control, testing, and wafer monitoring, e.g. pattern monitoring
70616Wafer pattern monitoring, i.e. measuring printed patterns or the aerial image at the wafer plane
70633Overlay
G03F 7/7085
GPHYSICS
03PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
FPHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR;
7Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
70Exposure apparatus for microlithography
708Construction of apparatus, e.g. environment, hygiene aspects or materials
7085Detection arrangement, e.g. detectors of apparatus alignment possibly mounted on wafers, exposure dose, photo-cleaning flux, stray light, thermal load
G03F 9/7046
GPHYSICS
03PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
FPHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR;
9Registration or positioning of originals, masks, frames, photographic sheets or textured or patterned surfaces, e.g. automatically
70for microlithography
7003Alignment type or strategy, e.g. leveling, global alignment
7046Strategy, e.g. mark, sensor or wavelength selection
G03F 9/7069
GPHYSICS
03PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
FPHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR;
9Registration or positioning of originals, masks, frames, photographic sheets or textured or patterned surfaces, e.g. automatically
70for microlithography
7069Alignment mark illumination, e.g. darkfield, dual focus
G03F 9/7088
GPHYSICS
03PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
FPHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR;
9Registration or positioning of originals, masks, frames, photographic sheets or textured or patterned surfaces, e.g. automatically
70for microlithography
7088Alignment mark detection, e.g. TTR, TTL, off-axis detection, array detector, video detection
Applicants
  • ASML HOLDING N.V. [NL]/[NL]
  • ASML NETHERLANDS B.V. [NL]/[NL]
Inventors
  • SWILLAM, Mohamed
  • HUISMAN, Simon, Reinald
  • KREUZER, Justin, Lloyd
Agents
  • ASML NETHERLANDS B.V.
Priority Data
62/943,87605.12.2019US
Publication Language English (EN)
Filing Language English (EN)
Designated States
Title
(EN) OVERLAY MEASUREMENT SYSTEM USING LOCK-IN AMPLIFIER TECHNIQUE
(FR) SYSTÈME DE MESURE DE SUPERPOSITION UTILISANT UNE TECHNIQUE D'AMPLIFICATEUR À VERROUILLAGE
Abstract
(EN)
A detection system (200) includes an illumination system (210), a first optical system (232), a phase modulator (220), a lock-in detector (255), and a function generator (230). The illumination system is configured to transmit an illumination beam (218) along an illumination path. The first optical system is configured to transmit the illumination beam toward a diffraction target (204) on a substrate (202). The first optical system is further configured to transmit a signal beam including diffraction order sub-beams (222, 224, 226) that are diffracted by the diffraction target. The phase modulator is configured to modulate the illumination beam or the signal beam based on a reference signal. The lock-in detector is configured to collect the signal beam and to measure a characteristic of the diffraction target based on the signal beam and the reference signal. The function generator is configured to generate the reference signal for the phase modulator and the lock-in detector.
(FR)
La présente invention concerne un système de détection (200) qui comprend un système d'éclairage (210), un premier système optique (232), un modulateur de phase (220), un détecteur à verrouillage (255) et un générateur de fonction (230). Le système d'éclairage est conçu pour transmettre un faisceau d'éclairage (218) le long d'un trajet d'éclairage. Le premier système optique est conçu pour transmettre le faisceau d'éclairage vers une cible de diffraction (204) située sur un substrat (202). Le premier système optique est en outre conçu pour transmettre un faisceau de signal comprenant des sous-faisceaux d'ordre de diffraction (222, 224, 226) qui sont diffractés par la cible de diffraction. Le modulateur de phase est conçu pour moduler le faisceau d'éclairage ou le faisceau de signal sur la base d'un signal de référence. Le détecteur à verrouillage est conçu pour collecter le faisceau de signal et pour mesurer une caractéristique de la cible de diffraction sur la base du faisceau de signal et du signal de référence. Le générateur de fonction est conçu pour générer le signal de référence pour le modulateur de phase et pour le détecteur à verrouillage.
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