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1. WO2021109794 - SEMICONDUCTOR DEVICE AND MANUFACTURING METHOD THEREFOR

Publication Number WO/2021/109794
Publication Date 10.06.2021
International Application No. PCT/CN2020/126966
International Filing Date 06.11.2020
IPC
H01L 27/146 2006.01
HELECTRICITY
01BASIC ELECTRIC ELEMENTS
LSEMICONDUCTOR DEVICES; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
27Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
14including semiconductor components sensitive to infra-red radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation
144Devices controlled by radiation
146Imager structures
CPC
H01L 27/14601
HELECTRICITY
01BASIC ELECTRIC ELEMENTS
LSEMICONDUCTOR DEVICES; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
27Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
14including semiconductor components sensitive to infra-red radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation
144Devices controlled by radiation
146Imager structures
14601Structural or functional details thereof
H01L 27/14603
HELECTRICITY
01BASIC ELECTRIC ELEMENTS
LSEMICONDUCTOR DEVICES; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
27Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
14including semiconductor components sensitive to infra-red radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation
144Devices controlled by radiation
146Imager structures
14601Structural or functional details thereof
14603Special geometry or disposition of pixel-elements, address-lines or gate-electrodes
H01L 27/1463
HELECTRICITY
01BASIC ELECTRIC ELEMENTS
LSEMICONDUCTOR DEVICES; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
27Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
14including semiconductor components sensitive to infra-red radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation
144Devices controlled by radiation
146Imager structures
14601Structural or functional details thereof
1463Pixel isolation structures
H01L 27/14632
HELECTRICITY
01BASIC ELECTRIC ELEMENTS
LSEMICONDUCTOR DEVICES; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
27Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
14including semiconductor components sensitive to infra-red radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation
144Devices controlled by radiation
146Imager structures
14601Structural or functional details thereof
14632Wafer-level processed structures
H01L 27/1464
HELECTRICITY
01BASIC ELECTRIC ELEMENTS
LSEMICONDUCTOR DEVICES; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
27Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
14including semiconductor components sensitive to infra-red radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation
144Devices controlled by radiation
146Imager structures
14601Structural or functional details thereof
1464Back illuminated imager structures
H01L 27/14643
HELECTRICITY
01BASIC ELECTRIC ELEMENTS
LSEMICONDUCTOR DEVICES; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
27Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
14including semiconductor components sensitive to infra-red radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation
144Devices controlled by radiation
146Imager structures
14643Photodiode arrays; MOS imagers
Applicants
  • 武汉新芯集成电路制造有限公司 WUHAN XINXIN SEMICONDUCTOR MANUFACTURING CO., LTD. [CN]/[CN]
Inventors
  • 胡胜 HU, Sheng
  • 杨帆 YANG, Fan
Agents
  • 上海思微知识产权代理事务所(普通合伙) SHANGHAI SAVVY INTELLECTUAL PROPERTY AGENCY
Priority Data
201911215993.302.12.2019CN
Publication Language Chinese (ZH)
Filing Language Chinese (ZH)
Designated States
Title
(EN) SEMICONDUCTOR DEVICE AND MANUFACTURING METHOD THEREFOR
(FR) DISPOSITIF À SEMI-CONDUCTEUR ET SON PROCÉDÉ DE FABRICATION
(ZH) 半导体器件及其制造方法
Abstract
(EN)
A semiconductor device and a manufacturing method therefor. The manufacturing method of the semiconductor device comprises: forming a trench filled structure in a substrate of a pixel region, a high-K dielectric layer being further sandwiched between a side wall of a filling material in the trench filled structure and the substrate (S12); enabling a buffer dielectric layer to cover the surface of the substrate of the pixel region, and enabling the buffer dielectric layer to bury the trench filled structure therein (S13); etching the buffer dielectric layer to form a first opening which exposes at least part of the substrate of the periphery of a top side wall of the trench filled structure and/or at least part of the top of the trench filled structure (S14); and forming a metal grid layer on the buffer dielectric layer, the metal grid layer being filled in the first opening so as to be electrically connected to the exposed part of the substrate and/or of the trench filled structure (S15). According to the semiconductor device and the manufacturing method therefor, the metal grid layer is electrically connected to the exposed part of the substrate and/or of the trench filled structure, so that the electrical performance of the semiconductor device can be optimized and improved.
(FR)
Dispositif à semi-conducteur et son procédé de fabrication. Le procédé de fabrication du dispositif à semi-conducteur consiste à : former une structure à tranchée remplie dans un substrat d'une région de pixel, une couche diélectrique à constante K élevée étant en outre prise en sandwich entre une paroi latérale d'un matériau de remplissage dans la structure à tranchée remplie et le substrat (S12) ; permettre à une couche diélectrique tampon de recouvrir la surface du substrat de la région de pixel, et permettre à la couche diélectrique tampon d'enfouir la structure à tranchée remplie à l'intérieur de celle-ci (S13) ; graver la couche diélectrique tampon pour former une première ouverture qui expose au moins une partie du substrat de la périphérie d'une paroi latérale supérieure de la structure à tranchée remplie et/ou au moins une partie de la partie supérieure de la structure à tranchée remplie (S14) ; et former une couche de grille métallique sur la couche diélectrique tampon, la couche de grille métallique étant chargée dans la première ouverture de manière à être électriquement connectée à la partie exposée du substrat et/ou de la structure à tranchée remplie (S15). Selon le dispositif à semi-conducteur et son procédé de fabrication, la couche de grille métallique est électriquement connectée à la partie exposée du substrat et/ou de la structure à tranchée remplie, de telle sorte que les performances électriques du dispositif à semi-conducteur peuvent être optimisées et améliorées.
(ZH)
一种半导体器件及其制造方法,所述半导体器件的制造方法包括:形成沟槽填充结构于像素区的衬底中,且沟槽填充结构中的填充材料的侧壁和衬底之间还夹有高K介质层(S12);覆盖缓冲介质层于像素区的衬底表面上,且缓冲介质层将沟槽填充结构掩埋在内(S13);刻蚀缓冲介质层,以形成至少暴露出沟槽填充结构的顶部侧壁外围的部分衬底和/或沟槽填充结构的至少部分顶部的第一开口(S14);以及,形成金属栅格层于缓冲介质层上且填充第一开口,以与暴露出的部分衬底和/或沟槽填充结构电性连接(S15)。所述半导体器件及其制造方法使得金属栅格层与暴露出的部分衬底和/或沟槽填充结构电性连接,进而使得能够对半导体器件进行电学性能方面的优化和改善。
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