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1. WO2021109207 - PREPARATION METHOD FOR GRAPHENE OXIDE THIN FILM, OLED DEVICE AND PREPARATIUON METHOD

Publication Number WO/2021/109207
Publication Date 10.06.2021
International Application No. PCT/CN2019/125080
International Filing Date 13.12.2019
IPC
H01L 51/56 2006.01
HELECTRICITY
01BASIC ELECTRIC ELEMENTS
LSEMICONDUCTOR DEVICES; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
51Solid state devices using organic materials as the active part, or using a combination of organic materials with other materials as the active part; Processes or apparatus specially adapted for the manufacture or treatment of such devices, or of parts thereof
50specially adapted for light emission, e.g. organic light emitting diodes (OLED) or polymer light emitting devices (PLED)
56Processes or apparatus specially adapted for the manufacture or treatment of such devices or of parts thereof
H01L 51/50 2006.01
HELECTRICITY
01BASIC ELECTRIC ELEMENTS
LSEMICONDUCTOR DEVICES; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
51Solid state devices using organic materials as the active part, or using a combination of organic materials with other materials as the active part; Processes or apparatus specially adapted for the manufacture or treatment of such devices, or of parts thereof
50specially adapted for light emission, e.g. organic light emitting diodes (OLED) or polymer light emitting devices (PLED)
CPC
H01L 51/0003
HELECTRICITY
01BASIC ELECTRIC ELEMENTS
LSEMICONDUCTOR DEVICES; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
51Solid state devices using organic materials as the active part, or using a combination of organic materials with other materials as the active part; Processes or apparatus specially adapted for the manufacture or treatment of such devices, or of parts thereof
0001Processes specially adapted for the manufacture or treatment of devices or of parts thereof
0002Deposition of organic semiconductor materials on a substrate
0003using liquid deposition, e.g. spin coating
H01L 51/0007
HELECTRICITY
01BASIC ELECTRIC ELEMENTS
LSEMICONDUCTOR DEVICES; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
51Solid state devices using organic materials as the active part, or using a combination of organic materials with other materials as the active part; Processes or apparatus specially adapted for the manufacture or treatment of such devices, or of parts thereof
0001Processes specially adapted for the manufacture or treatment of devices or of parts thereof
0002Deposition of organic semiconductor materials on a substrate
0003using liquid deposition, e.g. spin coating
0007characterised by the solvent
H01L 51/5056
HELECTRICITY
01BASIC ELECTRIC ELEMENTS
LSEMICONDUCTOR DEVICES; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
51Solid state devices using organic materials as the active part, or using a combination of organic materials with other materials as the active part; Processes or apparatus specially adapted for the manufacture or treatment of such devices, or of parts thereof
50specially adapted for light emission, e.g. organic light emitting diodes [OLED] or polymer light emitting devices [PLED]
5048Carrier transporting layer
5056Hole transporting layer
H01L 51/5088
HELECTRICITY
01BASIC ELECTRIC ELEMENTS
LSEMICONDUCTOR DEVICES; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
51Solid state devices using organic materials as the active part, or using a combination of organic materials with other materials as the active part; Processes or apparatus specially adapted for the manufacture or treatment of such devices, or of parts thereof
50specially adapted for light emission, e.g. organic light emitting diodes [OLED] or polymer light emitting devices [PLED]
5088Carrier injection layer
Applicants
  • 武汉华星光电半导体显示技术有限公司 WUHAN CHINA STAR OPTOELECTRONICS SEMICONDUCTOR DISPLAY TECHNOLOGY CO., LTD. [CN]/[CN]
Inventors
  • 汪亚民 WANG, Yamin
Agents
  • 深圳紫藤知识产权代理有限公司 PURPLEVINE INTELLECTUAL PROPERTY (SHENZHEN) CO., LTD
Priority Data
201911210605.202.12.2019CN
Publication Language Chinese (ZH)
Filing Language Chinese (ZH)
Designated States
Title
(EN) PREPARATION METHOD FOR GRAPHENE OXIDE THIN FILM, OLED DEVICE AND PREPARATIUON METHOD
(FR) PROCÉDÉ DE PRÉPARATION DE FILM MINCE D'OXYDE DE GRAPHÈNE, DISPOSITIF À OLED ET PROCÉDÉ DE PRÉPARATION
(ZH) 氧化石墨烯薄膜的制备方法、 OLED 器件及制备方法
Abstract
(EN)
A preparation method for a graphene oxide thin film, an OLED device and a preparation method. The OLED device (10) comprises a substrate (11), an anode (12), a hole injection layer (13), a hole transport layer (14), a light-emitting layer (15), an electron transport layer (16), an electron injection layer (17) and a cathode (18) that are stacked. The hole injection layer (13) is a graphene oxide layer that has a concentration range of 0.3-1 mg/ml. The hole transport layer (14) is any one among N, N'-diphenyl-N, N'-bis (3-methylphenyl)-1, 1'-biphenyl-4, 4'-diamine, 1,4-bis (diphenylamine) biphenyl, and N, N'-diphenyl-N, N'-bis (1-naphthyl)-1 and 1'-biphenyl-4, 4'-diamine.
(FR)
L'invention concerne un procédé de préparation d'un film mince d'oxyde de graphène, un dispositif à OLED et un procédé de préparation. Le dispositif à OLED (10) comprend un substrat (11), une anode (12), une couche d'injection à trous (13), une couche de transport à trous (14), une couche électroluminescente (15), une couche de transport d'électrons (16), une couche d'injection d'électrons (17) et une cathode (18) qui sont empilés. La couche d'injection à trous (13) est une couche d'oxyde de graphène qui a une plage de concentration de 0,3-1 mg/ml. La couche de transport à trous (14) est un quelconque élément parmi N, N'-diphényl-N, N'-bis (3-méthylphényl)) -1, 1 '-biphényl -4, 4 '-diamine, 1,4-bis (diphénylamine) biphényle, et N, N'-diphényl-N, N'-bis (1-naphtyl) -1 et 1 '-biphényl -4, 4 '-diamine.
(ZH)
一种氧化石墨烯薄膜的制备方法、一种OLED器件及制备方法,其中,所述OLED器件(10)包括层叠设置的基底(11)、阳极(12)、空穴注入层(13)、空穴传输层(14)、发光层(15)、电子传输层(16)、电子注入层(17)以及阴极(18),所述空穴注入层(13)为浓度范围为0.3~1mg/ml的氧化石墨烯层,所述空穴传输层(14)为N,N'-二苯基-N,N'-二(3-甲苯基)-1,1'-联苯-4,4'-二胺、1,4-二(二苯胺基)联苯以及N,N'-二苯基-N,N'-二(1-萘基)-1,1'-联苯-4,4'-二胺中的任意一种。
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