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1. WO2021109010 - MASS TRANSFER METHOD AND SYSTEM FOR SEMICONDUCTOR DEVICE

Publication Number WO/2021/109010
Publication Date 10.06.2021
International Application No. PCT/CN2019/122819
International Filing Date 03.12.2019
IPC
H01L 21/67 2006.01
HELECTRICITY
01BASIC ELECTRIC ELEMENTS
LSEMICONDUCTOR DEVICES; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
21Processes or apparatus specially adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
67Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components
H01L 33/02 2010.01
HELECTRICITY
01BASIC ELECTRIC ELEMENTS
LSEMICONDUCTOR DEVICES; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
33Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
02characterised by the semiconductor bodies
H01L 33/48 2010.01
HELECTRICITY
01BASIC ELECTRIC ELEMENTS
LSEMICONDUCTOR DEVICES; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
33Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
48characterised by the semiconductor body packages
H01L 27/15 2006.01
HELECTRICITY
01BASIC ELECTRIC ELEMENTS
LSEMICONDUCTOR DEVICES; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
27Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
15including semiconductor components with at least one potential-jump barrier or surface barrier, specially adapted for light emission
Applicants
  • 重庆康佳光电技术研究院有限公司 CHONGQING KONKA PHOTOELECTRIC TECHNOLOGY RESEARCH INSTITUTE CO., LTD [CN]/[CN]
Inventors
  • 汪楷伦 WANG, Kailun
  • 许时渊 XU, Shiyuan
  • 洪温振 HONG, Wenzhen
Priority Data
Publication Language Chinese (ZH)
Filing Language Chinese (ZH)
Designated States
Title
(EN) MASS TRANSFER METHOD AND SYSTEM FOR SEMICONDUCTOR DEVICE
(FR) PROCÉDÉ DE TRANSFERT DE MASSE ET SYSTÈME POUR DISPOSITIF À SEMI-CONDUCTEUR
(ZH) 一种半导体装置巨量转移方法和系统
Abstract
(EN)
A mass transfer method and system for a semiconductor device. The method comprises: providing a semiconductor device (200) formed on a native substrate (100); providing a transit substrate (10) coated with an adhesion layer (30), the viscidity of the adhesion layer (30) being in direct proportion to the temperature; pasting the side of the semiconductor device (200) distant from the native substrate (100) to the adhesion layer (30), so as to paste the semiconductor device (200) to the adhesion layer (30); peeling the native substrate (100) from the semiconductor device (200), and increasing the temperature of the adhesion layer (30) in the peeling process; using a transfer device (20) to capture the semiconductor device (200), so that the semiconductor device (200) is peeled from the transit substrate (10); and using the transfer device (20) to transfer the semiconductor device (200) to a target substrate (300), so that the semiconductor device (200) is installed on the target substrate (300).
(FR)
La présente invention concerne un procédé de transfert de masse et un système pour un dispositif à semi-conducteur. Le procédé comprend les étapes consistant à : fournir un dispositif à semi-conducteur (200) formé sur un substrat natif (100) ; fournir un substrat de transit (10) revêtu d'une couche d'adhérence (30), la viscosité de la couche d'adhérence (30) étant en proportion directe par rapport à la température ; coller le côté du dispositif à semi-conducteur (200) distant du substrat natif (100) à la couche d'adhérence (30), de manière à coller le dispositif à semi-conducteur (200) à la couche d'adhérence (30) ; peler le substrat natif (100) du dispositif à semi-conducteur (200), et augmenter la température de la couche d'adhérence (30) dans le processus de pelage ; utiliser un dispositif de transfert (20) pour capturer le dispositif à semi-conducteur (200), de sorte que le dispositif à semi-conducteur (200) est décollé du substrat de transit (10) ; et utiliser le dispositif de transfert (20) pour transférer le dispositif à semi-conducteur (200) à un substrat cible (300), de telle sorte que le dispositif à semi-conducteur (200) est installé sur le substrat cible (300).
(ZH)
一种半导体装置的巨量转移方法和系统,其中方法包括:提供形成于原生基板(100)的半导体装置(200);提供涂布有黏着层(30)的中转基板(10),黏着层(30)的粘性与温度大小成正比;将半导体装置(200)远离原生基板(100)的一侧与黏着层(30)粘贴以将半导体装置(200)粘贴于黏着层(30);从半导体装置(200)剥离原生基板(100),且在剥离过程中黏着层(30)温度增加;利用转移装置(20)抓取半导体装置(200)以使半导体装置(200)从中转基板(10)剥离;利用转移装置(20)将半导体装置(200)转移至目标基板(300),以将半导体装置(200)安装于目标基板(300)。
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