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1. WO2021049845 - OVERLAY MEASUREMENT DEVICE

Publication Number WO/2021/049845
Publication Date 18.03.2021
International Application No. PCT/KR2020/012096
International Filing Date 08.09.2020
IPC
G03F 7/20 2006.01
GPHYSICS
03PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
FPHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
7Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printed surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
20Exposure; Apparatus therefor
G03F 9/00 2006.01
GPHYSICS
03PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
FPHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
9Registration or positioning of originals, masks, frames, photographic sheets or textured or patterned surfaces, e.g. automatically
CPC
G03F 7/20
GPHYSICS
03PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
FPHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR;
7Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
20Exposure; Apparatus therefor
G03F 7/70575
GPHYSICS
03PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
FPHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR;
7Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
70Exposure apparatus for microlithography
70483Information management, control, testing, and wafer monitoring, e.g. pattern monitoring
7055Exposure light control, in all parts of the microlithographic apparatus, e.g. pulse length control, light interruption
70575Wavelength control, e.g. control of bandwidth, multiple wavelength, selection of wavelength, matching of optical components to wavelength
G03F 7/70633
GPHYSICS
03PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
FPHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR;
7Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
70Exposure apparatus for microlithography
70483Information management, control, testing, and wafer monitoring, e.g. pattern monitoring
70616Wafer pattern monitoring, i.e. measuring printed patterns or the aerial image at the wafer plane
70633Overlay
G03F 7/70825
GPHYSICS
03PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
FPHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR;
7Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
70Exposure apparatus for microlithography
708Construction of apparatus, e.g. environment, hygiene aspects or materials
70808Construction details, e.g. housing, load-lock, seals, windows for passing light in- and out of apparatus
70825Mounting of individual elements, e.g. mounts, holders or supports
H01L 21/67
HELECTRICITY
01BASIC ELECTRIC ELEMENTS
LSEMICONDUCTOR DEVICES; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
21Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
67Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; ; Apparatus not specifically provided for elsewhere
H01L 21/67242
HELECTRICITY
01BASIC ELECTRIC ELEMENTS
LSEMICONDUCTOR DEVICES; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
21Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
67Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; ; Apparatus not specifically provided for elsewhere
67005Apparatus not specifically provided for elsewhere
67242Apparatus for monitoring, sorting or marking
Applicants
  • (주)오로스 테크놀로지 AUROS TECHNOLOGY, INC. [KR]/[KR]
Inventors
  • 박규남 PARK, Gyu Nam
  • 신현기 SHIN, Hyeon Gi
  • 이성수 LEE, Seung Soo
Agents
  • 특허법인 다인 DYNE PATENT & LAW FIRM
Priority Data
10-2019-011195010.09.2019KR
Publication Language Korean (KO)
Filing Language Korean (KO)
Designated States
Title
(EN) OVERLAY MEASUREMENT DEVICE
(FR) DISPOSITIF DE MESURE DE RECOUVREMENT
(KO) 오버레이 측정장치
Abstract
(EN)
The present invention relates to an overlay measurement device. More particularly, the present invention relates to an overlay measurement device provided with an automatic focusing system using light sources of different wavelengths. The present invention provides an overlay measurement device for measuring an error between a first overlay mark and a second overlay mark respectively formed in different layers formed on a wafer, the overlay measurement device comprising: a first light source that emits a first beam; a first detector that acquires a signal from the first beam emitted from the first light source and reflected from a measurement position of the wafer; a second light source that emits a second beam having a wavelength different from that of the first beam; a second detector that acquires a signal from the second beam emitted from the second light source and reflected from the measurement position of the wafer; an objective lens that condenses the first beam and the second beam at the measurement position of the wafer, and collects the beams reflected from the measurement position; an actuator that adjusts the position of the objective lens relative to the wafer in the optical axis direction; a control means that controls the actuator; and a height detection means that detects the height of the first overlay mark on the basis of the change in the signal from the first detector according to the change in the position of the objective lens relative to the wafer in the optical axis direction, and detects the height of the second overlay mark on the basis of the change in the signal from the second detector according to the change in the position of the objective lens relative to the wafer in the optical axis direction.
(FR)
La présente invention concerne un dispositif de mesure de recouvrement. La présente invention concerne, en particulier, un dispositif de mesure de recouvrement pourvu d'un système de mise au point automatique ayant recours à des sources de lumière de différentes longueurs d'onde. La présente invention concerne un dispositif de mesure de recouvrement permettant de mesurer une erreur entre un premier repère de recouvrement et un second repère de recouvrement respectivement ménagés dans différentes couches formées sur une plaquette, le dispositif de mesure de recouvrement comprenant : une première source de lumière qui émet un premier faisceau ; un premier détecteur qui acquiert un signal émanant du premier faisceau émis par la première source de lumière et réfléchi au niveau d’une position de mesure de la plaquette ; une seconde source de lumière qui émet un second faisceau de longueur d'onde différente de celle du premier faisceau ; un second détecteur qui acquiert un signal émanant du second faisceau émis par la seconde source de lumière et réfléchi au niveau de la position de mesure de la plaquette ; une lentille d'objectif qui condense le premier faisceau et le second faisceau à la position de mesure de la plaquette, et collecte les faisceaux réfléchis au niveau de la position de mesure ; un actionneur qui règle la position de la lentille d'objectif par rapport à la plaquette dans la direction de l'axe optique ; un moyen de commande qui assure la commande l'actionneur ; et un moyen de détection de hauteur qui assure la détection de la hauteur du premier repère de recouvrement sur la base du changement intervenant dans le signal provenant du premier détecteur en fonction du changement de la position de la lentille d'objectif par rapport à la plaquette dans la direction de l'axe optique, et détecte la hauteur du second repère de recouvrement sur la base du changement intervenant dans le signal provenant du second détecteur en fonction du changement de la position de la lentille d'objectif par rapport à la plaquette dans la direction de l'axe optique.
(KO)
본 발명은 오버레이 측정장치에 관한 것이다. 더욱 상세하게는 서로 다른 파장의 광원을 사용하는 자동 초점(Auto focus) 시스템을 구비한 오버레이 측정장치에 관한 것이다. 본 발명은 웨이퍼에 형성된 서로 다른 층들에 각각 형성된 제1 오버레이 마크와 제2 오버레이 마크 사이의 오차를 측정하는 장치로서, 제1 빔을 조사하는 제1 광원과; 상기 제1 광원으로부터 나와서 상기 웨이퍼의 측정위치에서 반사된 상기 제1 빔에 의한 신호를 획득하는 제1 검출기와; 상기 제1 빔과 파장이 다른 제2 빔을 조사하는 제2 광원과; 상기 제2 광원으로부터 나와서 상기 웨이퍼의 상기 측정위치에서 반사된 상기 제2 빔에 의한 신호를 획득하는 제2 검출기와; 상기 제1 빔과 상기 제2 빔을 상기 웨이퍼의 상기 측정위치에 집광시키고, 상기 측정위치에서 반사된 빔을 수집하는 대물렌즈와; 상기 웨이퍼에 대한 상기 대물렌즈의 광축 방향의 상대 위치를 조절하는 액추에이터와; 상기 액추에이터를 제어하는 제어수단과; 상기 웨이퍼에 대한 상기 대물렌즈의 상기 광축 방향의 상대 위치의 변화에 따른 상기 제1 검출기의 신호의 변화를 기초로 상기 제1 오버레이 마크의 높이를 검출하고, 상기 웨이퍼에 대한 상기 대물렌즈의 상기 광축 방향의 상대 위치의 변화에 따른 상기 제2 검출기의 신호의 변화를 기초로 상기 제2 오버레이 마크의 높이를 검출하는 높이 검출수단을 포함하는 오버레이 측정장치를 제공한다.
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