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1. WO2021080953 - MONOLITHIC ANISOTROPIC SUBSTRATE SUPPORTS

Publication Number WO/2021/080953
Publication Date 29.04.2021
International Application No. PCT/US2020/056436
International Filing Date 20.10.2020
IPC
H01L 21/683 2006.01
HELECTRICITY
01BASIC ELECTRIC ELEMENTS
LSEMICONDUCTOR DEVICES; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
21Processes or apparatus specially adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
67Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components
683for supporting or gripping
H02N 13/00 2006.01
HELECTRICITY
02GENERATION, CONVERSION, OR DISTRIBUTION OF ELECTRIC POWER
NELECTRIC MACHINES NOT OTHERWISE PROVIDED FOR
13Clutches or holding devices using electrostatic attraction, e.g. using Johnson-Rahbek effect
H01L 21/67 2006.01
HELECTRICITY
01BASIC ELECTRIC ELEMENTS
LSEMICONDUCTOR DEVICES; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
21Processes or apparatus specially adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
67Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components
C23C 16/458 2006.01
CCHEMISTRY; METALLURGY
23COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
CCOATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
16Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition (CVD) processes
44characterised by the method of coating
458characterised by the method used for supporting substrates in the reaction chamber
Applicants
  • LAM RESEARCH CORPORATION [US]/[US]
Inventors
  • HOLLINGSWORTH, Joel
  • LINGAMPALLI, Ramkishan Rao
  • LEESER, Karl Frederick
  • TOPPING, Stephen
  • BAKER, Noah Elliot
Agents
  • WIGGINS, Michael D.
Priority Data
62/923,91221.10.2019US
Publication Language English (EN)
Filing Language English (EN)
Designated States
Title
(EN) MONOLITHIC ANISOTROPIC SUBSTRATE SUPPORTS
(FR) SUPPORTS DE SUBSTRAT ANISOTROPES MONOLITHIQUES
Abstract
(EN)
A substrate support includes a monolithic anisotropic body, which includes first, second and intermediate layers. The first layer is formed of a first material and disposed therein are RF and clamping electrodes. The second layer is formed of the first material or a second material and disposed therein is a heating element. The intermediate layer is formed of a different material than the first and second layers, such that at least one of: a thermal energy conductivity of the intermediate layer is different than a thermal energy conductivity of at least one of the first or second materials; or an electrical energy conductivity of the intermediate layer is different than an electrical conductivity of at least one of the first or second materials. Either the intermediate layer is disposed between the first and second layers or the second layer is disposed between the first and intermediate layers.
(FR)
L'invention concerne un support de substrat comprenant un corps anisotrope monolithique, qui comprend des première, seconde et couches intermédiaires. La première couche est formée d'un premier matériau et des électrodes RF et de serrage sont disposées à l'intérieur de celle-ci. La seconde couche est formée du premier matériau ou d'un second matériau et un élément chauffant est disposé à l'intérieur de celle-ci. La couche intermédiaire est formée d'un matériau différent de celui des première et seconde couches, de telle sorte qu'au moins l'une parmi : une conductivité d'énergie thermique de la couche intermédiaire est différente d'une conductivité d'énergie thermique d'au moins l'un des premier ou second matériaux ; ou une conductivité d'énergie électrique de la couche intermédiaire est différente d'une conductivité électrique d'au moins l'un des premier ou second matériaux. La couche intermédiaire est disposée entre les première et seconde couches ou la seconde couche est disposée entre les première et seconde couches intermédiaires.
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