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1. WO2022160116 - SEMICONDUCTOR DEVICE STRUCTURES AND METHODS OF MANUFACTURING THE SAME

Publication Number WO/2022/160116
Publication Date 04.08.2022
International Application No. PCT/CN2021/073929
International Filing Date 27.01.2021
IPC
H01L 29/778 2006.1
HELECTRICITY
01BASIC ELECTRIC ELEMENTS
LSEMICONDUCTOR DEVICES; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
29Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having at least one potential-jump barrier or surface barrier; Capacitors or resistors with at least one potential-jump barrier or surface barrier, e.g. PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof
66Types of semiconductor device
68controllable by only the electric current supplied, or only the electric potential applied, to an electrode which does not carry the current to be rectified, amplified, or switched
76Unipolar devices
772Field-effect transistors
778with two-dimensional charge carrier gas channel, e.g. HEMT
H01L 21/335 2006.1
HELECTRICITY
01BASIC ELECTRIC ELEMENTS
LSEMICONDUCTOR DEVICES; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
21Processes or apparatus specially adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
02Manufacture or treatment of semiconductor devices or of parts thereof
04the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer, carrier concentration layer
18the devices having semiconductor bodies comprising elements of group IV of the Periodic System or AIIIBV compounds with or without impurities, e.g. doping materials
334Multistep processes for the manufacture of devices of the unipolar type
335Field-effect transistors
Applicants
  • INNOSCIENCE (SUZHOU) SEMICONDUCTOR CO., LTD. [CN]/[CN]
Inventors
  • SHEN, Jingyu
  • ZHAO, Qiyue
  • ZHOU, Chunhua
  • YANG, Chao
  • GAO, Wuhao
  • SHI, Yu
  • WEI, Baoli
Agents
  • IDEA INTELLECTUAL (SHENZHEN) IP AGENCY
Priority Data
Publication Language English (en)
Filing Language English (EN)
Designated States
Title
(EN) SEMICONDUCTOR DEVICE STRUCTURES AND METHODS OF MANUFACTURING THE SAME
(FR) STRUCTURES DE DISPOSITIF À SEMI-CONDUCTEUR ET LEURS PROCÉDÉS DE FABRICATION
Abstract
(EN) Semiconductor device structures and methods for manufacturing the same are provided. The semiconductor device structure includes a substrate, a first nitride semiconductor layer, a second nitride semiconductor layer, a gate electrode, a first electrode, a first via and a second via. The substrate has a first surface and a second surface. The first nitride semiconductor layer is disposed on the first surface of the substrate. The second nitride semiconductor layer is disposed on the first nitride semiconductor layer and has a bandgap exceeding that of the first nitride semiconductor layer. The gate electrode and the first electrode are disposed on the second nitride semiconductor layer. The first via extends from the second surface and is electrically connected to the first electrode. The second via extends from the second surface. The depth of the first via is different from the depth of the second via.
(FR) L'invention concerne des structures de dispositif à semi-conducteur et leurs procédés de fabrication. La structure de dispositif à semi-conducteur comprend un substrat, une première couche de semi-conducteur au nitrure, une seconde couche de semi-conducteur au nitrure, une électrode de grille, une première électrode, un premier trou d'interconnexion et un second trou d'interconnexion. Le substrat présente une première surface et une seconde surface. La première couche semi-conductrice au nitrure est disposée sur la première surface du substrat. La seconde couche semi-conductrice au nitrure est disposée sur la première couche semi-conductrice au nitrure et présente une bande interdite supérieure à celle de la première couche semi-conductrice au nitrure. L'électrode de grille et la première électrode sont disposées sur la seconde couche semi-conductrice au nitrure. Le premier trou d'interconnexion s'étend à partir de la seconde surface et est électriquement connecté à la première électrode. Le second trou d'interconnexion s'étend à partir de la seconde surface. La profondeur du premier trou d'interconnexion est différente de la profondeur du second trou d'interconnexion.
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