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1. WO2022160089 - SEMICONDUCTOR DEVICE AND FABRICATION METHOD THEREOF

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Publication Number WO/2022/160089
Publication Date 04.08.2022
International Application No. PCT/CN2021/073739
International Filing Date 26.01.2021
IPC
H01L 29/06 2006.1
HELECTRICITY
01BASIC ELECTRIC ELEMENTS
LSEMICONDUCTOR DEVICES; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
29Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having at least one potential-jump barrier or surface barrier; Capacitors or resistors with at least one potential-jump barrier or surface barrier, e.g. PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof
02Semiconductor bodies
06characterised by their shape; characterised by the shapes, relative sizes, or dispositions of the semiconductor regions
H01L 21/335 2006.1
HELECTRICITY
01BASIC ELECTRIC ELEMENTS
LSEMICONDUCTOR DEVICES; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
21Processes or apparatus specially adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
02Manufacture or treatment of semiconductor devices or of parts thereof
04the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer, carrier concentration layer
18the devices having semiconductor bodies comprising elements of group IV of the Periodic System or AIIIBV compounds with or without impurities, e.g. doping materials
334Multistep processes for the manufacture of devices of the unipolar type
335Field-effect transistors
Applicants
  • INNOSCIENCE (SUZHOU) TECHNOLOGY CO., LTD. [CN]/[CN]
Inventors
  • CHOU, Yi-Lun
  • WU, Peng-Yi
Agents
  • IDEA INTELLECTUAL (SHENZHEN) IP AGENCY
Priority Data
Publication Language English (en)
Filing Language English (EN)
Designated States
Title
(EN) SEMICONDUCTOR DEVICE AND FABRICATION METHOD THEREOF
(FR) DISPOSITIF À SEMI-CONDUCTEUR ET SON PROCÉDÉ DE FABRICATION
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Abstract
(EN) The present disclosure provides a semiconductor device and a fabrication method thereof. The semiconductor device includes a substrate, a first nitride semiconductor layer, a second nitride semiconductor layer, and a carbonitride semiconductor layer. The first nitride semiconductor layer is over the substrate. The second nitride semiconductor layer is formed on the first nitride semiconductor layer and has a greater bandgap than that of the first nitride semiconductor layer. The carbonitride semiconductor layer is between the substrate and the first nitride semiconductor layer.
(FR) La présente invention concerne un dispositif à semi-conducteur et son procédé de fabrication. Le dispositif à semi-conducteur comprend un substrat, une première couche semi-conductrice au nitrure, une seconde couche semi-conductrice au nitrure et une couche semi-conductrice de carbonitrure. La première couche semi-conductrice au nitrure est sur le substrat. La seconde couche semi-conductrice au nitrure est formée sur la première couche semi-conductrice au nitrure et présente une bande interdite supérieure à celle de la première couche semi-conductrice au nitrure. La couche semi-conductrice de carbonitrure est située entre le substrat et la première couche semi-conductrice au nitrure.
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