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1. WO2022094649 - METAL OXYNITRIDE ELECTRON TRANSPORT FILMS FOR USE IN PEROVSKITE SOLAR CELLS AND METHOD OF MAKING SAME

Publication Number WO/2022/094649
Publication Date 12.05.2022
International Application No. PCT/AU2021/051266
International Filing Date 29.10.2021
IPC
H01L 31/18 2006.1
HELECTRICITY
01BASIC ELECTRIC ELEMENTS
LSEMICONDUCTOR DEVICES; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
31Semiconductor devices sensitive to infra-red radiation, light, electromagnetic radiation of shorter wavelength, or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
18Processes or apparatus specially adapted for the manufacture or treatment of these devices or of parts thereof
H01L 21/363 2006.1
HELECTRICITY
01BASIC ELECTRIC ELEMENTS
LSEMICONDUCTOR DEVICES; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
21Processes or apparatus specially adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
02Manufacture or treatment of semiconductor devices or of parts thereof
04the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer, carrier concentration layer
34the devices having semiconductor bodies not provided for in groups H01L21/06, H01L21/16, and H01L21/18159
36Deposition of semiconductor materials on a substrate, e.g. epitaxial growth
363using physical deposition, e.g. vacuum deposition, sputtering
H01L 21/477 2006.1
HELECTRICITY
01BASIC ELECTRIC ELEMENTS
LSEMICONDUCTOR DEVICES; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
21Processes or apparatus specially adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
02Manufacture or treatment of semiconductor devices or of parts thereof
04the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer, carrier concentration layer
34the devices having semiconductor bodies not provided for in groups H01L21/06, H01L21/16, and H01L21/18159
46Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/36-H01L21/428142
477Thermal treatment for modifying the properties of semiconductor bodies, e.g. annealing, sintering
H01L 31/06 2012.1
HELECTRICITY
01BASIC ELECTRIC ELEMENTS
LSEMICONDUCTOR DEVICES; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
31Semiconductor devices sensitive to infra-red radiation, light, electromagnetic radiation of shorter wavelength, or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
04adapted as photovoltaic conversion devices
06characterised by at least one potential-jump barrier or surface barrier
Applicants
  • THE AUSTRALIAN NATIONAL UNIVERSITY [AU]/[AU]
Inventors
  • PENG, Jun
  • WHITE, Thomas
  • CATCHPOLE, Kylie
Priority Data
202090402905.11.2020AU
Publication Language English (en)
Filing Language English (EN)
Designated States
Title
(EN) METAL OXYNITRIDE ELECTRON TRANSPORT FILMS FOR USE IN PEROVSKITE SOLAR CELLS AND METHOD OF MAKING SAME
(FR) FILMS DE TRANSPORT D'ÉLECTRONS D'OXYNITRURE MÉTALLIQUE DESTINÉS À ÊTRE UTILISÉS DANS DES PHOTOPILES DE PÉROVSKITE ET LEUR PROCÉDÉ DE FABRICATION
Abstract
(EN) A process of producing a nitrogen doped metal oxynitride electron transport layer (ETL) as part of a perovskite solar cell; said process including the steps of: using a Physical Vapour Deposition (PVD) method to deposit a metal nitride in a controlled atmosphere including an inert gas; and annealing the deposited metal nitride in a controlled oxygen-rich atmosphere and at a controlled temperature, such that the partial oxidation of the metal nitride to a metal oxide produces a metal oxynitride. In some embodiments the metal oxynitride is titanium oxynitride.
(FR) Procédé de production de couche de transport d'électrons (ETL) d'oxynitrure métallique dopée à l'azote en tant que partie d'une photopile pérovskite ; ledit procédé comprend les étapes consistant : à utiliser un procédé de dépôt physique en phase vapeur (PVD) pour déposer du nitrure métallique dans une atmosphère contrôlée comprenant un gaz inerte ; et à recuire le nitrure métallique déposé dans une atmosphère riche en oxygène contrôlée et à une température régulée, de telle sorte que l'oxydation partielle du nitrure métallique en oxyde métallique produit un oxynitrure métallique. Dans certains modes de réalisation, l'oxynitrure métallique est de l'oxynitrure de titane.
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