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1. WO2022009474 - SILICON CARBIDE SEMICONDUCTOR DEVICE

Publication Number WO/2022/009474
Publication Date 13.01.2022
International Application No. PCT/JP2021/009766
International Filing Date 11.03.2021
IPC
H01L 29/06 2006.1
HELECTRICITY
01BASIC ELECTRIC ELEMENTS
LSEMICONDUCTOR DEVICES; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
29Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having at least one potential-jump barrier or surface barrier; Capacitors or resistors with at least one potential-jump barrier or surface barrier, e.g. PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof
02Semiconductor bodies
06characterised by their shape; characterised by the shapes, relative sizes, or dispositions of the semiconductor regions
H01L 29/78 2006.1
HELECTRICITY
01BASIC ELECTRIC ELEMENTS
LSEMICONDUCTOR DEVICES; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
29Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having at least one potential-jump barrier or surface barrier; Capacitors or resistors with at least one potential-jump barrier or surface barrier, e.g. PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof
66Types of semiconductor device
68controllable by only the electric current supplied, or only the electric potential applied, to an electrode which does not carry the current to be rectified, amplified, or switched
76Unipolar devices
772Field-effect transistors
78with field effect produced by an insulated gate
H01L 29/12 2006.1
HELECTRICITY
01BASIC ELECTRIC ELEMENTS
LSEMICONDUCTOR DEVICES; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
29Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having at least one potential-jump barrier or surface barrier; Capacitors or resistors with at least one potential-jump barrier or surface barrier, e.g. PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof
02Semiconductor bodies
12characterised by the materials of which they are formed
H01L 21/336 2006.1
HELECTRICITY
01BASIC ELECTRIC ELEMENTS
LSEMICONDUCTOR DEVICES; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
21Processes or apparatus specially adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
02Manufacture or treatment of semiconductor devices or of parts thereof
04the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer, carrier concentration layer
18the devices having semiconductor bodies comprising elements of group IV of the Periodic System or AIIIBV compounds with or without impurities, e.g. doping materials
334Multistep processes for the manufacture of devices of the unipolar type
335Field-effect transistors
336with an insulated gate
H01L 29/861 2006.1
HELECTRICITY
01BASIC ELECTRIC ELEMENTS
LSEMICONDUCTOR DEVICES; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
29Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having at least one potential-jump barrier or surface barrier; Capacitors or resistors with at least one potential-jump barrier or surface barrier, e.g. PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof
66Types of semiconductor device
86controllable only by variation of the electric current supplied, or only the electric potential applied, to one or more of the electrodes carrying the current to be rectified, amplified, oscillated, or switched
861Diodes
H01L 29/868 2006.1
HELECTRICITY
01BASIC ELECTRIC ELEMENTS
LSEMICONDUCTOR DEVICES; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
29Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having at least one potential-jump barrier or surface barrier; Capacitors or resistors with at least one potential-jump barrier or surface barrier, e.g. PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof
66Types of semiconductor device
86controllable only by variation of the electric current supplied, or only the electric potential applied, to one or more of the electrodes carrying the current to be rectified, amplified, oscillated, or switched
861Diodes
868PIN diodes
Applicants
  • 住友電気工業株式会社 SUMITOMO ELECTRIC INDUSTRIES, LTD. [JP]/[JP]
  • 国立研究開発法人産業技術総合研究所 NATIONAL INSTITUTE OF ADVANCED INDUSTRIAL SCIENCE AND TECHNOLOGY [JP]/[JP]
Inventors
  • 増田 健良 MASUDA, Takeyoshi
  • 小杉 亮治 KOSUGI, Ryouji
Agents
  • 特許業務法人深見特許事務所 FUKAMI PATENT OFFICE, P.C.
Priority Data
2020-11890010.07.2020JP
Publication Language Japanese (ja)
Filing Language Japanese (JA)
Designated States
Title
(EN) SILICON CARBIDE SEMICONDUCTOR DEVICE
(FR) DISPOSITIF À SEMI-CONDUCTEUR AU CARBURE DE SILICIUM
(JA) 炭化珪素半導体装置
Abstract
(EN) In the present invention, an active region includes a first super junction layer and a device layer. The first super junction layer has first regions and second regions in an alternating configuration. A surrounding region includes a second super junction layer, a terminal layer, and an insulation layer. The second super junction layer has third regions and fourth regions in an alternating configuration. The terminal layer is provided upon the second super junction layer in contact therewith, and has fifth regions and sixth regions in an alternating configuration. The fifth regions are provided as respectively corresponding to the third regions, and the sixth regions are provided as respectively corresponding to the fourth regions. The impurity concentration of the sixth regions is greater than the impurity concentration of the fifth regions by a factor equal to or less than 68 times the impurity concentration of the fifth regions.
(FR) Dans la présente invention, une région active comprend une première couche de super-jonction et une couche de dispositif. La première couche de super-jonction a des premières régions et des secondes régions dans une configuration alternée. Une région environnante comprend une seconde couche de super-jonction, une couche de borne et une couche d'isolation. La seconde couche de super-jonction a des troisièmes régions et des quatrièmes régions dans une configuration alternée. La couche de borne est disposée sur la seconde couche de super-jonction en contact avec celle-ci, et a des cinquième régions et des sixième régions dans une configuration alternée. Les cinquièmes régions sont fournies comme correspondant respectivement aux troisièmes régions, et les sixième régions sont fournies comme correspondant respectivement aux quatrièmes régions. La concentration en impuretés des sixièmes régions est supérieure à la concentration en impuretés des cinquièmes régions d'un facteur inférieur ou égal à 68 fois la concentration en impuretés des cinquièmes régions.
(JA) 活性領域は、第1スーパージャンクション層と、素子層とを含んでいる。第1スーパージャンクション層は、第1領域および第2領域を交互に有している。周辺領域は、第2スーパージャンクション層と、終端層と、絶縁層とを含んでいる。第2スーパージャンクション層は、第3領域および第4領域を交互に有している。終端層は、第2スーパージャンクション層の上に接して設けられ、第5領域および第6領域を交互に有している。第5領域は第3領域に対応して設けられるともに、第6領域は第4領域に対応して設けられている。第6領域の不純物濃度は、第5領域の不純物濃度よりも大きく、かつ第5領域の不純物濃度の68倍以下である。
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