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1. WO2022008209 - METHOD FOR PRODUCING A GAS CURTAIN OF PURGE GAS IN A SLIT VALVE TUNNEL, AND SLIT VALVE TUNNEL

Publication Number WO/2022/008209
Publication Date 13.01.2022
International Application No. PCT/EP2021/066637
International Filing Date 18.06.2021
Chapter 2 Demand Filed 27.08.2021
IPC
H01L 21/677 2006.1
HELECTRICITY
01BASIC ELECTRIC ELEMENTS
LSEMICONDUCTOR DEVICES; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
21Processes or apparatus specially adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
67Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components
677for conveying, e.g. between different work stations
C23C 16/455 2006.1
CCHEMISTRY; METALLURGY
23COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
CCOATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
16Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition (CVD) processes
44characterised by the method of coating
455characterised by the method used for introducing gases into the reaction chamber or for modifying gas flows in the reaction chamber
H01L 21/67 2006.1
HELECTRICITY
01BASIC ELECTRIC ELEMENTS
LSEMICONDUCTOR DEVICES; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
21Processes or apparatus specially adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
67Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components
F16K 3/02 2006.1
FMECHANICAL ENGINEERING; LIGHTING; HEATING; WEAPONS; BLASTING
16ENGINEERING ELEMENTS OR UNITS; GENERAL MEASURES FOR PRODUCING AND MAINTAINING EFFECTIVE FUNCTIONING OF MACHINES OR INSTALLATIONS; THERMAL INSULATION IN GENERAL
KVALVES; TAPS; COCKS; ACTUATING-FLOATS; DEVICES FOR VENTING OR AERATING
3Gate valves or sliding valves, i.e. cut-off apparatus with closing members having a sliding movement along the seat for opening and closing
02with flat sealing faces; Packings therefor
H01J 37/32 2006.1
HELECTRICITY
01BASIC ELECTRIC ELEMENTS
JELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
37Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
32Gas-filled discharge tubes
F16K 51/02 2006.1
FMECHANICAL ENGINEERING; LIGHTING; HEATING; WEAPONS; BLASTING
16ENGINEERING ELEMENTS OR UNITS; GENERAL MEASURES FOR PRODUCING AND MAINTAINING EFFECTIVE FUNCTIONING OF MACHINES OR INSTALLATIONS; THERMAL INSULATION IN GENERAL
KVALVES; TAPS; COCKS; ACTUATING-FLOATS; DEVICES FOR VENTING OR AERATING
51Other details not peculiar to particular types of valves or cut-off apparatus
02specially adapted for high-vacuum installations
Applicants
  • SILTRONIC AG [DE]/[DE]
Inventors
  • MOOS, Patrick
  • FELDMANN, Marco
Agents
  • STAUDACHER, Wolfgang
Priority Data
20184139.206.07.2020EP
Publication Language German (de)
Filing Language German (DE)
Designated States
Title
(DE) VERFAHREN ZUM ERZEUGEN EINES GASVORHANGS AUS SPÜLGAS IN EINEM SCHLITZVENTIL-TUNNEL UND SCHLITZVENTIL-TUNNEL
(EN) METHOD FOR PRODUCING A GAS CURTAIN OF PURGE GAS IN A SLIT VALVE TUNNEL, AND SLIT VALVE TUNNEL
(FR) PROCÉDÉ DE FABRICATION D'UN RIDEAU DE GAZ DE GAZ DE DRAINAGE DANS UN TUNNEL DE SOUPAPE À FENTE ET TUNNEL DE SOUPAPE À FENTE
Abstract
(DE) Verfahren zum Erzeugen eines Gasvorhangs aus Spülgas in einem Schlitzventil-Tunnel und Schlitzventil-Tunnel Verfahren zum Erzeugen eines Gasvorhangs aus Spülgas in einem Schlitzventil-Tunnel einer Vorrichtung zum Behandeln einer Halbleiterscheibe und Schlitzventil-Tunnel. Das Verfahren umfasst, dass das Spülgas zu zwei Enden eines Kanals geleitet wird, der in einem Kopfabschnitt des Schlitzventil-Tunnels angeordnet und mit einem abnehmbaren Deckel abgedeckt ist, und dass das Spülgas durch einen Schlitz im Boden des Kanals als Gasvorhang zu einem Fußabschnitt des Schlitzventil-Tunnels geleitet wird, während eine Hableiterscheibe durch eine Durchgangsöffnung zwischen dem Kopfabschnitt und dem Fußabschnitt des Schlitzventil-Tunnels transportiert wird.
(EN) The invention relates to a method for producing a gas curtain of purge gas in a slit valve tunnel of a device for treating a semiconductor wafer and to a slit valve tunnel. The method comprises conducting the purge gas to two ends of a channel which is arranged in a head portion of the slit valve tunnel and is covered with a removable cover, and conducting the purge gas through a slit in the bottom of the channel as a gas curtain to a foot portion of the slit valve tunnel, while a semiconductor wafer is conveyed through a through-opening between the head portion and the foot portion of the slit valve tunnel.
(FR) L'invention se rapporte à un procédé de fabrication d'un rideau de gaz de gaz de drainage dans un tunnel de soupape à fente d'un dispositif de traitement d'une tranche de semi-conducteur et à un tunnel de soupape à fente. Le procédé consiste à conduire le gaz de drainage vers deux extrémités d'un canal qui est disposé dans une partie de tête du tunnel de valve à fente et qui est recouvert d'un couvercle amovible, et à conduire le gaz de drainage à travers une fente dans le fond du canal sous la forme d'un rideau de gaz jusqu'à une partie de pied du tunnel de valve à fente, pendant qu'une tranche de semi-conducteur est transportée à travers une ouverture de passage entre la partie de tête et la partie de pied du tunnel de soupape à fente.
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