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1. WO2021065810 - METHOD FOR MANUFACTURING SEMICONDUCTOR DEVICE AND SEMICONDUCTOR DEVICE

Publication Number WO/2021/065810
Publication Date 08.04.2021
International Application No. PCT/JP2020/036662
International Filing Date 28.09.2020
IPC
H01L 25/07 2006.01
HELECTRICITY
01BASIC ELECTRIC ELEMENTS
LSEMICONDUCTOR DEVICES; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
25Assemblies consisting of a plurality of individual semiconductor or other solid state devices
03all the devices being of a type provided for in the same subgroup of groups H01L27/-H01L51/128
04the devices not having separate containers
07the devices being of a type provided for in group H01L29/78
H01L 25/18 2006.01
HELECTRICITY
01BASIC ELECTRIC ELEMENTS
LSEMICONDUCTOR DEVICES; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
25Assemblies consisting of a plurality of individual semiconductor or other solid state devices
18the devices being of types provided for in two or more different subgroups of the same main group of groups H01L27/-H01L51/160
H01L 25/04 2014.01
HELECTRICITY
01BASIC ELECTRIC ELEMENTS
LSEMICONDUCTOR DEVICES; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
25Assemblies consisting of a plurality of individual semiconductor or other solid state devices
03all the devices being of a type provided for in the same subgroup of groups H01L27/-H01L51/128
04the devices not having separate containers
H01L 21/02 2006.01
HELECTRICITY
01BASIC ELECTRIC ELEMENTS
LSEMICONDUCTOR DEVICES; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
21Processes or apparatus specially adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
02Manufacture or treatment of semiconductor devices or of parts thereof
H01L 21/20 2006.01
HELECTRICITY
01BASIC ELECTRIC ELEMENTS
LSEMICONDUCTOR DEVICES; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
21Processes or apparatus specially adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
02Manufacture or treatment of semiconductor devices or of parts thereof
04the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer, carrier concentration layer
18the devices having semiconductor bodies comprising elements of group IV of the Periodic System or AIIIBV compounds with or without impurities, e.g. doping materials
20Deposition of semiconductor materials on a substrate, e.g. epitaxial growth
H01L 21/66 2006.01
HELECTRICITY
01BASIC ELECTRIC ELEMENTS
LSEMICONDUCTOR DEVICES; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
21Processes or apparatus specially adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
66Testing or measuring during manufacture or treatment
Applicants
  • 京セラ株式会社 KYOCERA CORPORATION [JP]/[JP]
Inventors
  • 澤田 達郎 SAWADA, Tatsuro
Agents
  • 荒船 博司 ARAFUNE, Hiroshi
  • 荒船 良男 ARAFUNE, Yoshio
Priority Data
2019-17869830.09.2019JP
Publication Language Japanese (JA)
Filing Language Japanese (JA)
Designated States
Title
(EN) METHOD FOR MANUFACTURING SEMICONDUCTOR DEVICE AND SEMICONDUCTOR DEVICE
(FR) PROCÉDÉ DE FABRICATION DE DISPOSITIF À SEMI-CONDUCTEUR ET DISPOSITIF À SEMI-CONDUCTEUR
(JA) 半導体装置の製造方法及び半導体装置
Abstract
(EN)
Provided is a method for manufacturing a semiconductor device comprising a common support substrate and a plurality of semiconductor elements. The method comprises: an inspection step for measuring, with respect to each of a plurality of semiconductor elements 101-104 supported side by side on a common support substrate 20, a predetermined electrical parameter and determining whether a measured value satisfies a predetermined condition; and an electrode forming step for forming an electrode film 22 which is, among the plurality of semiconductor elements, electrically connected to semiconductor elements that have passed the inspection in the inspection step and electrically insulated from a semiconductor element that has failed the inspection in the inspection step, in a state such that the electrode film 22 is continuous across projected surfaces on an electrode film arranging surface 22A including projected surfaces A1, A2, A3 of the semiconductor elements that have passed the inspection and a projected surface B1 of the semiconductor element that has failed the inspection, the semiconductor elements still being supported on the common support substrate.
(FR)
L'invention concerne un procédé de fabrication d'un dispositif à semi-conducteur comprenant un substrat de support commun et une pluralité d'éléments semi-conducteurs. Le procédé comprend : une étape d'inspection consistant à mesurer, par rapport à chaque élément semi-conducteur d'une pluralité d'éléments semi-conducteurs 101-104 montés côte à côte sur un substrat de support commun 20, un paramètre électrique prédéfini et déterminer si une valeur mesurée satisfait une condition prédéfinie ; et une étape de formation d'électrode consistant à former un film d'électrode 22 qui est, parmi la pluralité d'éléments semi-conducteurs, connecté électriquement à des éléments semi-conducteurs qui ont réussi l'inspection lors de l'étape d'inspection et sont isolés électriquement d'un élément semi-conducteur qui a échoué à l'inspection lors de l'étape d'inspection, dans un état tel que le film d'électrode 22 est continu sur toute l'étendue des surfaces en saillie sur une surface d'agencement de film d'électrode 22A comprenant des surfaces en saillie A1, A2, A3 des éléments semi-conducteurs qui ont réussi l'inspection et une surface en saillie B1 de l'élément semi-conducteur qui a échoué à l'inspection, les éléments semi-conducteurs étant toujours montés sur le substrat de support commun.
(JA)
半導体素子の製造方法は、共通の支持基板20に並んで支持された複数の半導体素子101-104のそれぞれについて、所定の電気的パラメータを測定し、測定値が所定の条件を満たすか否か検査する検査工程と、複数の半導体素子のうち、検査工程で検査合格の半導体素子と電気的に接続され、検査工程で検査不合格の半導体素子と電気的に絶縁される電極膜22を、当該電極膜配置面22Aへの投影面であって共通の支持基板に支持されたままの検査合格の半導体素子の投影面A1,A2,A3及び検査不合格の半導体素子の投影面B1に跨って連続した状態に形成する電極形成工程と、を備え、共通の支持基板と、複数の半導体素子とを含む半導体装置を製造する。
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