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1. WO2021030641 - POWER AMPLIFIER

Publication Number WO/2021/030641
Publication Date 18.02.2021
International Application No. PCT/US2020/046254
International Filing Date 13.08.2020
IPC
H03F 1/02 2006.01
HELECTRICITY
03BASIC ELECTRONIC CIRCUITRY
FAMPLIFIERS
1Details of amplifiers with only discharge tubes, only semiconductor devices or only unspecified devices as amplifying elements
02Modifications of amplifiers to raise the efficiency, e.g. gliding Class A stages, use of an auxiliary oscillation
H03F 1/56 2006.01
HELECTRICITY
03BASIC ELECTRONIC CIRCUITRY
FAMPLIFIERS
1Details of amplifiers with only discharge tubes, only semiconductor devices or only unspecified devices as amplifying elements
56Modifications of input or output impedances, not otherwise provided for
H03F 3/193 2006.01
HELECTRICITY
03BASIC ELECTRONIC CIRCUITRY
FAMPLIFIERS
3Amplifiers with only discharge tubes or only semiconductor devices as amplifying elements
189High-frequency amplifiers, e.g. radio frequency amplifiers
19with semiconductor devices only
193with field-effect devices
H03F 3/21 2006.01
HELECTRICITY
03BASIC ELECTRONIC CIRCUITRY
FAMPLIFIERS
3Amplifiers with only discharge tubes or only semiconductor devices as amplifying elements
20Power amplifiers, e.g. Class B amplifiers, Class C amplifiers
21with semiconductor devices only
CPC
H03F 1/0211
HELECTRICITY
03BASIC ELECTRONIC CIRCUITRY
FAMPLIFIERS
1Details of amplifiers with only discharge tubes, only semiconductor devices or only unspecified devices as amplifying elements
02Modifications of amplifiers to raise the efficiency, e.g. gliding Class A stages, use of an auxiliary oscillation
0205in transistor amplifiers
0211with control of the supply voltage or current
H03F 1/0288
HELECTRICITY
03BASIC ELECTRONIC CIRCUITRY
FAMPLIFIERS
1Details of amplifiers with only discharge tubes, only semiconductor devices or only unspecified devices as amplifying elements
02Modifications of amplifiers to raise the efficiency, e.g. gliding Class A stages, use of an auxiliary oscillation
0205in transistor amplifiers
0288using a main and one or several auxiliary peaking amplifiers whereby the load is connected to the main amplifier using an impedance inverter, e.g. Doherty amplifiers
H03F 1/565
HELECTRICITY
03BASIC ELECTRONIC CIRCUITRY
FAMPLIFIERS
1Details of amplifiers with only discharge tubes, only semiconductor devices or only unspecified devices as amplifying elements
56Modifications of input or output impedances, not otherwise provided for
565using inductive elements
H03F 2200/387
HELECTRICITY
03BASIC ELECTRONIC CIRCUITRY
FAMPLIFIERS
2200Indexing scheme relating to amplifiers
387A circuit being added at the output of an amplifier to adapt the output impedance of the amplifier
H03F 2200/391
HELECTRICITY
03BASIC ELECTRONIC CIRCUITRY
FAMPLIFIERS
2200Indexing scheme relating to amplifiers
391the output circuit of an amplifying stage comprising an LC-network
H03F 2200/451
HELECTRICITY
03BASIC ELECTRONIC CIRCUITRY
FAMPLIFIERS
2200Indexing scheme relating to amplifiers
451the amplifier being a radio frequency amplifier
Applicants
  • MIXCOMM, INC. [US]/[US]
Inventors
  • BUCKWALTER, James F.
  • NING, Kang
Agents
  • STRAUB, Michael, P.
Priority Data
62/886,11713.08.2019US
Publication Language English (EN)
Filing Language English (EN)
Designated States
Title
(EN) POWER AMPLIFIER
(FR) AMPLIFICATEUR DE PUISSANCE
Abstract
(EN)
Methods and apparatus for implementing a power efficient amplifier device through the use of a main (primary) and auxiliary (secondary) power amplifier are described. The primary and secondary amplifiers operate as current sources providing current to the load. Capacitance coupling is used to couple the primary and secondary amplifier outputs. In some embodiments the combination of primary and secondary amplifiers achieve high average efficiency over the operating range of the device in which the primary and secondary amplifiers are used in combination as an amplifier device. The amplifier device is well suited for implementation using CMOS technology, e.g., N- MOSFETs, and can be implemented in an integrated circuit space efficient manner that is well suited for supporting RF transmissions in the GHz frequency range, e.g., 30 GHz frequency range. The primary amplifier in some embodiments is a CLASS-AB or B amplifier and the secondary amplifier is a CLASS-C amplifier.
(FR)
La présente invention concerne des procédés et un appareil pour mettre en œuvre un dispositif d'amplificateur à faible consommation d'énergie grâce à l'utilisation d'un amplificateur de puissance principal (primaire) et d'un amplificateur de puissance auxiliaire (secondaire). Les amplificateurs primaire et secondaire fonctionnent en tant que sources de courant fournissant du courant à la charge. Un couplage capacitif est utilisé pour coupler les sorties d'amplificateurs primaire et secondaire. Dans certains modes de réalisation, la combinaison d'amplificateurs primaire et secondaire permet d'obtenir un rendement moyen élevé sur la plage de fonctionnement du dispositif dans lequel les amplificateurs primaire et secondaire sont utilisés en combinaison en tant que dispositif d'amplificateur. Le dispositif d'amplificateur convient parfaitement pour une mise en œuvre à l'aide de la technologie CMOS, par exemple, des transistors à effet de champ métal-oxyde semiconducteur de type N (N-MOSFET), et peut être mis en œuvre d'une manière efficace dans l'espace de circuit intégré qui convient parfaitement pour la prise en charge de transmissions radiofréquence (RF) dans la plage de fréquences de l'ordre du GHz, par exemple, la plage de fréquences de 30 GHz. L'amplificateur primaire, dans certains modes de réalisation, est un amplificateur de CLASSE AB ou B et l'amplificateur secondaire est un amplificateur de CLASSE C.
Latest bibliographic data on file with the International Bureau