Processing

Please wait...

Settings

Settings

Goto Application

1. WO2021030236 - PRODUCING A RIBBON OR WAFER WITH REGIONS OF LOW OXYGEN CONCENTRATION

Publication Number WO/2021/030236
Publication Date 18.02.2021
International Application No. PCT/US2020/045552
International Filing Date 09.08.2020
IPC
C30B 15/06 2006.01
CCHEMISTRY; METALLURGY
30CRYSTAL GROWTH
BSINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
15Single-crystal growth by pulling from a melt, e.g. Czochralski method
06Non-vertical pulling
C30B 15/00 2006.01
CCHEMISTRY; METALLURGY
30CRYSTAL GROWTH
BSINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
15Single-crystal growth by pulling from a melt, e.g. Czochralski method
CPC
H01L 31/0264
HELECTRICITY
01BASIC ELECTRIC ELEMENTS
LSEMICONDUCTOR DEVICES; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
31Semiconductor devices sensitive to infra-red radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
0248characterised by their semiconductor bodies
0256characterised by the material
0264Inorganic materials
Applicants
  • LEADING EDGE EQUIPMENT TECHNOLOGIES, INC. [US]/[US]
Inventors
  • GREENLEE, Alison
  • STODDARD, Nathan
  • APPEL, Jesse, S.
  • KELLERMAN, Peter
  • DAGGOLU, Parthiv
  • MARTINEZ, Alexander
  • PIROOZ, Saeed
  • WILLIARD, Brandon
  • BOWEN, Charles
  • MCMULLEN, Brian
  • MORRELL, David
  • SUN, Dawei
Agents
  • LUCEK, Nathaniel, W.
  • KADLE, Ranjana
  • CUTAIA, Alfonzo, I.
  • DIMAIO, John, T., M.
  • LOPINSKI, John, D.
Priority Data
62/884,85109.08.2019US
Publication Language English (EN)
Filing Language English (EN)
Designated States
Title
(EN) PRODUCING A RIBBON OR WAFER WITH REGIONS OF LOW OXYGEN CONCENTRATION
(FR) PRODUCTION D'UN RUBAN OU D'UNE TRANCHE COMPORTANT DES RÉGIONS À FAIBLE CONCENTRATION EN OXYGÈNE
Abstract
(EN)
A ribbon is formed such that the ribbon floats on a melt using a cold initializer facing an exposed surface of the melt. The ribbon is single crystal silicon. The ribbon is pulled from the silicon melt at a low angle off the melt surface. The ribbon is formed at a same rate as the pulling. The ribbon is separated from the melt at a wall of the crucible where a stable meniscus forms. The ribbon has a thickness between a first surface and an opposite second surface from 50 μm to 5 mm. The ribbon includes a first region extending a first depth from the first surface. The first region has a reduced oxygen concentration relative to a bulk of the ribbon.
(FR)
Un ruban est formé de sorte que le ruban flotte sur une masse fondue à l'aide d'un dispositif d'amorçage du froid faisant face à une surface exposée de la masse fondue. Le ruban est constitué de silicium monocristallin. Le ruban est tiré à partir de la masse fondue de silicium à un faible angle par rapport à la surface de la masse fondue. Le ruban est formé à une même vitesse que le tirage. Le ruban est séparé de la masse fondue au niveau d'une paroi du creuset au niveau de laquelle se forme un ménisque stable. Le ruban présente une épaisseur entre une première surface et une seconde surface en regard de 50 μm à 5 mm. Le ruban comprend une première région s'étendant à une première profondeur de la première surface. La première région présente une concentration en oxygène réduite par rapport à une masse du ruban.
Latest bibliographic data on file with the International Bureau