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1. WO2021002134 - SEMICONDUCTOR FILM, PHOTOELECTRIC CONVERSION ELEMENT, IMAGE SENSOR, AND METHOD FOR MANUFACTURING SEMICONDUCTOR FILM

Publication Number WO/2021/002134
Publication Date 07.01.2021
International Application No. PCT/JP2020/021700
International Filing Date 02.06.2020
IPC
H01L 31/10 2006.01
HELECTRICITY
01BASIC ELECTRIC ELEMENTS
LSEMICONDUCTOR DEVICES; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
31Semiconductor devices sensitive to infra-red radiation, light, electromagnetic radiation of shorter wavelength, or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
08in which radiation controls flow of current through the device, e.g. photoresistors
10characterised by at least one potential-jump barrier or surface barrier, e.g. phototransistors
H01L 21/368 2006.01
HELECTRICITY
01BASIC ELECTRIC ELEMENTS
LSEMICONDUCTOR DEVICES; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
21Processes or apparatus specially adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
02Manufacture or treatment of semiconductor devices or of parts thereof
04the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer, carrier concentration layer
34the devices having semiconductor bodies not provided for in groups H01L21/06, H01L21/16, and H01L21/18159
36Deposition of semiconductor materials on a substrate, e.g. epitaxial growth
368using liquid deposition
H01L 31/0264 2006.01
HELECTRICITY
01BASIC ELECTRIC ELEMENTS
LSEMICONDUCTOR DEVICES; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
31Semiconductor devices sensitive to infra-red radiation, light, electromagnetic radiation of shorter wavelength, or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
0248characterised by their semiconductor bodies
0256characterised by the material
0264Inorganic materials
Applicants
  • 富士フイルム株式会社 FUJIFILM CORPORATION [JP]/[JP]
Inventors
  • 小野 雅司 ONO Masashi
  • 高田 真宏 TAKATA Masahiro
  • 宮田 哲志 MIYATA Tetsushi
Agents
  • 中島 順子 NAKASHIMA Junko
  • 米倉 潤造 YONEKURA Junzo
  • 藤森 義真 FUJIMORI Yoshinao
  • 上出 真紀 KAMIDE Maki
Priority Data
2019-12310501.07.2019JP
Publication Language Japanese (JA)
Filing Language Japanese (JA)
Designated States
Title
(EN) SEMICONDUCTOR FILM, PHOTOELECTRIC CONVERSION ELEMENT, IMAGE SENSOR, AND METHOD FOR MANUFACTURING SEMICONDUCTOR FILM
(FR) FILM SEMI-CONDUCTEUR, ÉLÉMENT DE CONVERSION PHOTOÉLECTRIQUE, CAPTEUR D'IMAGE ET PROCÉDÉ DE FABRICATION DE FILM SEMI-CONDUCTEUR
(JA) 半導体膜、光電変換素子、イメージセンサおよび半導体膜の製造方法
Abstract
(EN)
Provided is a semiconductor film having exceptional drive durability, a photoelectric conversion element, an image sensor, and a method for manufacturing a semiconductor film. The semiconductor film includes: an aggregate of semiconductor quantum dots containing metal atoms; and ligands coordinated to the semiconductor quantum dots. The ligands include a first ligand that is an inorganic halide, and a second ligand represented by any of formulae (A) to (C). XA1 and XA2 are separated by LA1 by 3 to 10 atoms. XB1 and XB3 are separated by LB1 by 3 to 10 atoms, and XB2 and XB3 are separated by LB2 by 1 to 10 atoms. XC1 and XC4 are separated by LC4 by 3 to 10 atoms, XC2 and XC4 are separated by LC2 by 1 to 10 atoms, and XC3 and XC4 are separated by LC3 by 1 to 10 atoms.
(FR)
L'invention concerne un film semi-conducteur ayant une durabilité de commande exceptionnelle, un élément de conversion photoélectrique, un capteur d'image et un procédé de fabrication d'un film semi-conducteur. Le film semi-conducteur comprend : un agrégat de points quantiques semi-conducteurs contenant des atomes métalliques ; et des ligands coordonnés aux points quantiques semi-conducteurs. Les ligands comprennent un premier ligand qui est un halogénure inorganique, et un second ligand représenté par l'une quelconque des formules (A) à (C). XA1 et XA2 sont séparés par LA1 de 3 à 10 atomes. XB1 et XB3 sont séparés par LB1 de 3 à 10 atomes, et XB2 et XB3 sont séparés par LB2 de 1 à 10 atomes. XC1 et XC4 sont séparés par LC4 de 3 à 10 atomes, XC2 et XC4 sont séparés par LC2 de 1 à 10 atomes, et XC3 et XC4 sont séparés par LC3 de 1 à 10 atomes.
(JA)
駆動耐久性に優れた半導体膜、光電変換素子、イメージセンサおよび半導体膜の製造方法を提供する。半導体膜は、金属原子を含む半導体量子ドットの集合体と、半導体量子ドットに配位する配位子と、を含み、配位子は、無機ハロゲン化物である第1の配位子と、式(A)~(C)のいずれかで表される第2の配位子と、を含む。XA1とXA2はLA1によって、3~10原子隔てられている。XB1とXB3はLB1によって、3~10原子隔てられており、XB2とXB3はLB2によって、1~10原子隔てられている。XC1とXC4はLC1によって、3~10原子隔てられており、XC2とXC4はLC2によって、1~10原子隔てられており、XC3とXC4は、LC3によって、1~10原子隔てられている。
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