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1. WO2020208990 - SEMICONDUCTOR DEVICE

Publication Number WO/2020/208990
Publication Date 15.10.2020
International Application No. PCT/JP2020/010216
International Filing Date 10.03.2020
IPC
H01L 21/28 2006.01
HELECTRICITY
01BASIC ELECTRIC ELEMENTS
LSEMICONDUCTOR DEVICES; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
21Processes or apparatus specially adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
02Manufacture or treatment of semiconductor devices or of parts thereof
04the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer, carrier concentration layer
18the devices having semiconductor bodies comprising elements of group IV of the Periodic System or AIIIBV compounds with or without impurities, e.g. doping materials
28Manufacture of electrodes on semiconductor bodies using processes or apparatus not provided for in groups H01L21/20-H01L21/268158
H01L 21/3205 2006.01
HELECTRICITY
01BASIC ELECTRIC ELEMENTS
LSEMICONDUCTOR DEVICES; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
21Processes or apparatus specially adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
02Manufacture or treatment of semiconductor devices or of parts thereof
04the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer, carrier concentration layer
18the devices having semiconductor bodies comprising elements of group IV of the Periodic System or AIIIBV compounds with or without impurities, e.g. doping materials
30Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20-H01L21/26142
31to form insulating layers thereon, e.g. for masking or by using photolithographic techniques; After-treatment of these layers; Selection of materials for these layers
3205Deposition of non-insulating-, e.g. conductive- or resistive-, layers, on insulating layers; After-treatment of these layers
Applicants
  • 住友電気工業株式会社 SUMITOMO ELECTRIC INDUSTRIES, LTD. [JP]/[JP]
Inventors
  • 酒井 光彦 SAKAI, Mitsuhiko
  • 大森 弘貴 OOMORI, Hirotaka
Agents
  • 特許業務法人深見特許事務所 FUKAMI PATENT OFFICE, P.C.
Priority Data
2019-07340108.04.2019JP
Publication Language Japanese (JA)
Filing Language Japanese (JA)
Designated States
Title
(EN) SEMICONDUCTOR DEVICE
(FR) DISPOSITIF À SEMI-CONDUCTEUR
(JA) 半導体装置
Abstract
(EN)
A semiconductor device according to the present invention is provided with: a semiconductor substrate having a first main surface; a first aluminum electrode that has a first surface opposing the first main surface and a second surface opposite to the first surface, and that is disposed on the semiconductor substrate; a passivation film that covers the peripheral edge of the second surface and that has an opening which exposes a part of the second surface; and a copper film. The second surface exposed from the opening has a recess that is recessed toward the first surface. The copper film is disposed in the recess.
(FR)
Un dispositif à semi-conducteur selon la présente invention comprend : un substrat semi-conducteur ayant une première surface principale ; une première électrode en aluminium qui a une première surface opposée à la première surface principale et une seconde surface opposée à la première surface, et qui est disposée sur le substrat semi-conducteur ; un film de passivation qui recouvre le bord périphérique de la seconde surface et qui a une ouverture qui expose une partie de la seconde surface ; et un film de cuivre. La seconde surface exposée à partir de l'ouverture a un évidement qui est évidé vers la première surface. Le film de cuivre est disposé dans l'évidement.
(JA)
本開示の半導体装置は、第1主面を有する半導体基板と、第1主面と対向している第1面と、第1面の反対面である第2面とを有し、半導体基板上に配置された第1アルミニウム電極と、第2面の周縁を覆い、第2面の一部を露出させる開口を有するパッシベーション膜と、銅膜とを備えている。開口から露出している第2面は、第1面に向かって窪む凹部を有している。銅膜は、凹部中に配置されている。
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