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1. WO2020208967 - TWO-SIDE POLISHING METHOD

Publication Number WO/2020/208967
Publication Date 15.10.2020
International Application No. PCT/JP2020/007893
International Filing Date 27.02.2020
IPC
B24B 37/005 2012.01
BPERFORMING OPERATIONS; TRANSPORTING
24GRINDING; POLISHING
BMACHINES, DEVICES, OR PROCESSES FOR GRINDING OR POLISHING; DRESSING OR CONDITIONING OF ABRADING SURFACES; FEEDING OF GRINDING, POLISHING, OR LAPPING AGENTS
37Lapping machines or devices; Accessories
005Control means for lapping machines or devices
B24B 37/08 2012.01
BPERFORMING OPERATIONS; TRANSPORTING
24GRINDING; POLISHING
BMACHINES, DEVICES, OR PROCESSES FOR GRINDING OR POLISHING; DRESSING OR CONDITIONING OF ABRADING SURFACES; FEEDING OF GRINDING, POLISHING, OR LAPPING AGENTS
37Lapping machines or devices; Accessories
04designed for working plane surfaces
07characterised by the movement of the work or lapping tool
08for double side lapping
B24B 37/12 2012.01
BPERFORMING OPERATIONS; TRANSPORTING
24GRINDING; POLISHING
BMACHINES, DEVICES, OR PROCESSES FOR GRINDING OR POLISHING; DRESSING OR CONDITIONING OF ABRADING SURFACES; FEEDING OF GRINDING, POLISHING, OR LAPPING AGENTS
37Lapping machines or devices; Accessories
11Lapping tools
12Lapping plates for working plane surfaces
B24B 37/14 2012.01
BPERFORMING OPERATIONS; TRANSPORTING
24GRINDING; POLISHING
BMACHINES, DEVICES, OR PROCESSES FOR GRINDING OR POLISHING; DRESSING OR CONDITIONING OF ABRADING SURFACES; FEEDING OF GRINDING, POLISHING, OR LAPPING AGENTS
37Lapping machines or devices; Accessories
11Lapping tools
12Lapping plates for working plane surfaces
14characterised by the composition or properties of the plate materials
B24B 53/017 2012.01
BPERFORMING OPERATIONS; TRANSPORTING
24GRINDING; POLISHING
BMACHINES, DEVICES, OR PROCESSES FOR GRINDING OR POLISHING; DRESSING OR CONDITIONING OF ABRADING SURFACES; FEEDING OF GRINDING, POLISHING, OR LAPPING AGENTS
53Devices or means for dressing or conditioning abrasive surfaces
017Devices or means for dressing, cleaning or otherwise conditioning lapping tools
H01L 21/304 2006.01
HELECTRICITY
01BASIC ELECTRIC ELEMENTS
LSEMICONDUCTOR DEVICES; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
21Processes or apparatus specially adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
02Manufacture or treatment of semiconductor devices or of parts thereof
04the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer, carrier concentration layer
18the devices having semiconductor bodies comprising elements of group IV of the Periodic System or AIIIBV compounds with or without impurities, e.g. doping materials
30Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20-H01L21/26142
302to change the physical characteristics of their surfaces, or to change their shape, e.g. etching, polishing, cutting
304Mechanical treatment, e.g. grinding, polishing, cutting
Applicants
  • 信越半導体株式会社 SHIN-ETSU HANDOTAI CO., LTD. [JP]/[JP]
Inventors
  • 田中 佑宜 TANAKA Yuki
Agents
  • 好宮 幹夫 YOSHIMIYA Mikio
  • 小林 俊弘 KOBAYASHI Toshihiro
Priority Data
2019-07562511.04.2019JP
Publication Language Japanese (JA)
Filing Language Japanese (JA)
Designated States
Title
(EN) TWO-SIDE POLISHING METHOD
(FR) PROCÉDÉ DE POLISSAGE À DEUX CÔTÉS
(JA) 両面研磨方法
Abstract
(EN)
The present invention is a two-side polishing method for polishing the two sides of a wafer that is disposed between a polishing pad which is affixed to an upper surface of a lower platen and a polishing pad which is affixed to a lower surface of an upper platen provided above the lower platen, the method being characterized in that, if an absolute value for the difference between an inner peripheral section gap and an outer peripheral section gap between the two polishing pads is used as a pad gap, the pad gap during the polishing of the two sides of the wafer is larger than the pad gap during the dressing of the two polishing pads. Due to this configuration, a two-side polishing method is provided that achieves both an improved quality level (treatment accuracy) and extended cloth life.
(FR)
La présente invention concerne un procédé de polissage à deux côtés destiné à polir les deux côtés d'une tranche qui est disposée entre un tampon de polissage qui est fixé à une surface supérieure d'un plateau inférieur et un tampon de polissage qui est fixé à une surface inférieure d'un plateau supérieur disposé au-dessus du plateau inférieur, le procédé étant caractérisé en ce que, si une valeur absolue pour la différence entre un espace de section périphérique interne et un espace de section périphérique externe entre les deux tampons de polissage est utilisée comme un espace de tampon, l'espace de tampon pendant le polissage des deux côtés de la tranche est plus grand que l'espace de tampon pendant l'apprêt des deux tampons de polissage. Grâce à cette configuration, la présente invention fournit un procédé de polissage à deux côtés qui permet d'obtenir à la fois un niveau de qualité amélioré (précision de traitement) et une durée de vie prolongée.
(JA)
本発明は、下定盤の上面に張り付けられた研磨パッドと前記下定盤の上方に設けられた上定盤の下面に張り付けられた研磨パッドとの間にウェーハを配置して該ウェーハの両面を研磨する両面研磨方法において、前記両研磨パッド間の内周部の空隙と外周部の空隙との差の絶対値をパッド空隙とした場合に、前記ウェーハ両面の研磨を実施しているときの前記パッド空隙を、前記両研磨パッドのドレスを実施しているときの前記パッド空隙よりも大きくすることを特徴とする両面研磨方法である。これにより、品質レベル(加工精度)の向上とクロスライフの延長とを同時に実現する両面研磨方法が提供される。
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