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1. WO2020131412 - CAPACITANCE BALANCE IN DUAL SIDED CONTACT SWITCH

Publication Number WO/2020/131412
Publication Date 25.06.2020
International Application No. PCT/US2019/064819
International Filing Date 06.12.2019
IPC
H01L 21/8234 2006.01
HELECTRICITY
01BASIC ELECTRIC ELEMENTS
LSEMICONDUCTOR DEVICES; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
21Processes or apparatus specially adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
70Manufacture or treatment of devices consisting of a plurality of solid state components or integrated circuits formed in or on a common substrate or of specific parts thereof; Manufacture of integrated circuit devices or of specific parts thereof
77Manufacture or treatment of devices consisting of a plurality of solid state components or integrated circuits formed in, or on, a common substrate
78with subsequent division of the substrate into plural individual devices
82to produce devices, e.g. integrated circuits, each consisting of a plurality of components
822the substrate being a semiconductor, using silicon technology
8232Field-effect technology
8234MIS technology
H01L 27/088 2006.01
HELECTRICITY
01BASIC ELECTRIC ELEMENTS
LSEMICONDUCTOR DEVICES; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
27Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
02including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having at least one potential-jump barrier or surface barrier; including integrated passive circuit elements with at least one potential-jump barrier or surface barrier
04the substrate being a semiconductor body
08including only semiconductor components of a single kind
085including field-effect components only
088the components being field-effect transistors with insulated gate
H01L 27/12 2006.01
HELECTRICITY
01BASIC ELECTRIC ELEMENTS
LSEMICONDUCTOR DEVICES; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
27Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
02including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having at least one potential-jump barrier or surface barrier; including integrated passive circuit elements with at least one potential-jump barrier or surface barrier
12the substrate being other than a semiconductor body, e.g. an insulating body
H01L 21/84 2006.01
HELECTRICITY
01BASIC ELECTRIC ELEMENTS
LSEMICONDUCTOR DEVICES; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
21Processes or apparatus specially adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
70Manufacture or treatment of devices consisting of a plurality of solid state components or integrated circuits formed in or on a common substrate or of specific parts thereof; Manufacture of integrated circuit devices or of specific parts thereof
77Manufacture or treatment of devices consisting of a plurality of solid state components or integrated circuits formed in, or on, a common substrate
78with subsequent division of the substrate into plural individual devices
82to produce devices, e.g. integrated circuits, each consisting of a plurality of components
84the substrate being other than a semiconductor body, e.g. being an insulating body
H01L 27/02 2006.01
HELECTRICITY
01BASIC ELECTRIC ELEMENTS
LSEMICONDUCTOR DEVICES; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
27Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
02including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having at least one potential-jump barrier or surface barrier; including integrated passive circuit elements with at least one potential-jump barrier or surface barrier
H01L 21/768 2006.01
HELECTRICITY
01BASIC ELECTRIC ELEMENTS
LSEMICONDUCTOR DEVICES; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
21Processes or apparatus specially adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
70Manufacture or treatment of devices consisting of a plurality of solid state components or integrated circuits formed in or on a common substrate or of specific parts thereof; Manufacture of integrated circuit devices or of specific parts thereof
71Manufacture of specific parts of devices defined in group H01L21/7086
768Applying interconnections to be used for carrying current between separate components within a device
Applicants
  • QUALCOMM INCORPORATED [US]/[US]
Inventors
  • LIANG, Qingqing
  • VEDULA, Ravi Pramod Kumar
  • IMTHURN, George Pete
  • BRINDLE, Christopher Nelles
  • GOKTEPELI, Sinan
Agents
  • GORDON, Alan
Priority Data
16/230,88421.12.2018US
Publication Language English (EN)
Filing Language English (EN)
Designated States
Title
(EN) CAPACITANCE BALANCE IN DUAL SIDED CONTACT SWITCH
(FR) ÉQUILIBRE DE CAPACITÉ DANS UN COMMUTATEUR DE CONTACT DOUBLE FACE
Abstract
(EN)
A dual sided contact switch has a first independent drain/source region (372) of a multi-gate active device. The dual sided contact switch also has a first shared drain/source region (374) of the multi- gate active device. The dual sided contact switch has a second independent drain/source region (376) of the multi-gate active device, adjacent to the first shared drain/source region. The dual sided contact switch also has a second shared drain/source region of the multi-gate active device, adjacent to the first independent drain/ source region. The dual sided contact switch has a gate region (356) between the first independent drain/source region and the first shared drain/source region, and also between the second independent drain/ source region and the second shared drain/source region.
(FR)
La présente invention concerne un commutateur de contact double face qui comporte une première région de source/drain indépendante (372) d'un dispositif actif à multiples grilles. Le commutateur de contact double face comprend également une première région de drain/source partagée (374) du dispositif actif à multiples grilles. Le commutateur de contact double face comporte une seconde région de drain/source indépendante (376) du dispositif actif à multiples grilles, adjacente à la première région de drain/source partagée. Le commutateur de contact double face comporte également une seconde région de drain/source partagée du dispositif actif à grilles multiples, adjacente à la première région de drain/source indépendante. Le commutateur de contact double face comporte une région de grille (356) entre la première région de drain/source indépendante et la première région de drain/source partagée et également entre la seconde région de drain/source indépendante et la seconde région de drain/source partagée.
Also published as
Latest bibliographic data on file with the International Bureau