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1. WO2020102228 - SILICON NITRIDE ETCHING COMPOSITION AND METHOD

Publication Number WO/2020/102228
Publication Date 22.05.2020
International Application No. PCT/US2019/060974
International Filing Date 12.11.2019
IPC
C09K 13/06 2006.01
CCHEMISTRY; METALLURGY
09DYES; PAINTS; POLISHES; NATURAL RESINS; ADHESIVES; COMPOSITIONS NOT OTHERWISE PROVIDED FOR; APPLICATIONS OF MATERIALS NOT OTHERWISE PROVIDED FOR
KMATERIALS FOR APPLICATIONS NOT OTHERWISE PROVIDED FOR; APPLICATIONS OF MATERIALS NOT OTHERWISE PROVIDED FOR
13Etching, surface-brightening or pickling compositions
04containing an inorganic acid
06with organic material
C09K 13/08 2006.01
CCHEMISTRY; METALLURGY
09DYES; PAINTS; POLISHES; NATURAL RESINS; ADHESIVES; COMPOSITIONS NOT OTHERWISE PROVIDED FOR; APPLICATIONS OF MATERIALS NOT OTHERWISE PROVIDED FOR
KMATERIALS FOR APPLICATIONS NOT OTHERWISE PROVIDED FOR; APPLICATIONS OF MATERIALS NOT OTHERWISE PROVIDED FOR
13Etching, surface-brightening or pickling compositions
04containing an inorganic acid
08containing a fluorine compound
H01L 21/306 2006.01
HELECTRICITY
01BASIC ELECTRIC ELEMENTS
LSEMICONDUCTOR DEVICES; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
21Processes or apparatus specially adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
02Manufacture or treatment of semiconductor devices or of parts thereof
04the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer, carrier concentration layer
18the devices having semiconductor bodies comprising elements of group IV of the Periodic System or AIIIBV compounds with or without impurities, e.g. doping materials
30Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20-H01L21/26142
302to change the physical characteristics of their surfaces, or to change their shape, e.g. etching, polishing, cutting
306Chemical or electrical treatment, e.g. electrolytic etching
H01L 21/311 2006.01
HELECTRICITY
01BASIC ELECTRIC ELEMENTS
LSEMICONDUCTOR DEVICES; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
21Processes or apparatus specially adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
02Manufacture or treatment of semiconductor devices or of parts thereof
04the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer, carrier concentration layer
18the devices having semiconductor bodies comprising elements of group IV of the Periodic System or AIIIBV compounds with or without impurities, e.g. doping materials
30Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20-H01L21/26142
31to form insulating layers thereon, e.g. for masking or by using photolithographic techniques; After-treatment of these layers; Selection of materials for these layers
3105After-treatment
311Etching the insulating layers
Applicants
  • ENTEGRIS, INC. [US]/[US]
Inventors
  • BILODEAU, Steven M.
  • HONG, SeongJin
  • WU, Hsing-Chen
  • YANG, Min-Chieh
  • COOPER, Emanuel I.
Agents
  • AMICI, Robert M.
Priority Data
62/767,90415.11.2018US
Publication Language English (EN)
Filing Language English (EN)
Designated States
Title
(EN) SILICON NITRIDE ETCHING COMPOSITION AND METHOD
(FR) COMPOSITION ET PROCÉDÉ DE GRAVURE DE NITRURE DE SILICIUM
Abstract
(EN)
Compositions useful for the selective removal of silicon nitride materials relative to polysilicon, silicon oxide materials and/or silicide materials from a microelectronic device having same thereon are provided. The compositions of the invention are particularly useful in the etching of 3D NAND structures.
(FR)
L'invention porte sur des compositions utiles permettant d'éliminer sélectivement des matériaux à base de nitrure de silicium, par rapport au silicium polycristallin, des matériaux à base d'oxyde de silicium et/ou des matériaux à base de siliciure d'un dispositif microélectronique sur lequel ils se trouvent. Les compositions selon l'invention sont particulièrement utiles pour la gravure de structures NAND 3D.
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