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1. WO2020101375 - SUBSTRATE PROCESSING DEVICE AND SUBSTRATE PROCESSING METHOD

Publication Number WO/2020/101375
Publication Date 22.05.2020
International Application No. PCT/KR2019/015498
International Filing Date 14.11.2019
IPC
H01L 21/67 2006.01
HELECTRICITY
01BASIC ELECTRIC ELEMENTS
LSEMICONDUCTOR DEVICES; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
21Processes or apparatus specially adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
67Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components
C23C 16/455 2006.01
CCHEMISTRY; METALLURGY
23COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
CCOATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
16Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition (CVD) processes
44characterised by the method of coating
455characterised by the method used for introducing gases into the reaction chamber or for modifying gas flows in the reaction chamber
H01L 21/687 2006.01
HELECTRICITY
01BASIC ELECTRIC ELEMENTS
LSEMICONDUCTOR DEVICES; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
21Processes or apparatus specially adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
67Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components
683for supporting or gripping
687using mechanical means, e.g. chucks, clamps or pinches
H05H 1/46 2006.01
HELECTRICITY
05ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR
HPLASMA TECHNIQUE; PRODUCTION OF ACCELERATED ELECTRICALLY- CHARGED PARTICLES OR OF NEUTRONS; PRODUCTION OR ACCELERATION OF NEUTRAL MOLECULAR OR ATOMIC BEAMS
1Generating plasma; Handling plasma
24Generating plasma
46using applied electromagnetic fields, e.g. high frequency or microwave energy
H01L 21/02 2006.01
HELECTRICITY
01BASIC ELECTRIC ELEMENTS
LSEMICONDUCTOR DEVICES; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
21Processes or apparatus specially adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
02Manufacture or treatment of semiconductor devices or of parts thereof
H01J 37/32 2006.01
HELECTRICITY
01BASIC ELECTRIC ELEMENTS
JELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
37Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
32Gas-filled discharge tubes
Applicants
  • 주성엔지니어링(주) JUSUNG ENGINEERING CO., LTD. [KR]/[KR]
Inventors
  • 황철주 HWANG, Chul-Joo
Agents
  • 특허법인 천문 ASTRAN INT'L IP GROUP
Priority Data
10-2018-014018114.11.2018KR
10-2019-001575611.02.2019KR
10-2019-007910302.07.2019KR
Publication Language Korean (KO)
Filing Language Korean (KO)
Designated States
Title
(EN) SUBSTRATE PROCESSING DEVICE AND SUBSTRATE PROCESSING METHOD
(FR) DISPOSITIF DE TRAITEMENT DE SUBSTRAT ET PROCÉDÉ DE TRAITEMENT DE SUBSTRAT
(KO) 기판처리장치 및 기판처리방법
Abstract
(EN)
The present invention relates to a substrate processing device and a substrate processing method, the substrate processing device comprising: a chamber; a substrate support part installed in a processing space inside the chamber so as to enable one or more substrate to rotate; a first gas spraying part for spraying a source gas on a first area of the processing space; a second gas spraying part for spraying, on a second area of the processing space, a reactant gas reacting with the source gas on the second area; and a third gas spraying part for spraying, on a third area, a purge gas for dividing the first area and the second area.
(FR)
La présente invention concerne un dispositif de traitement de substrat et un procédé de traitement de substrat, le dispositif de traitement de substrat comprenant : une chambre ; une partie de support de substrat installée dans un espace de traitement à l'intérieur de la chambre de façon à permettre à un ou plusieurs substrats de tourner ; une première partie de pulvérisation de gaz pour pulvériser un gaz source sur une première zone de l'espace de traitement ; une deuxième partie de pulvérisation de gaz pour pulvériser, sur une deuxième zone de l'espace de traitement, un gaz réactif réagissant avec le gaz source sur la deuxième zone ; et une troisième partie de pulvérisation de gaz pour pulvériser, sur une troisième zone, un gaz de purge pour diviser la première zone et la deuxième zone.
(KO)
본 발명은 챔버; 상기 챔버의 내부의 공정공간에 하나 이상의 기판이 회전 가능하게 설치된 기판지지부; 상기 공정공간의 제1영역에 소스가스를 분사하기 위한 제1가스분사부; 상기 공정공간의 제2영역에 상기 소스가스와 반응하는 리액턴트가스를 상기 제2영역에 분사하기 위한 제2가스분사부; 및 상기 제1영역과 상기 제2영역을 분할하는 퍼지가스를 제3영역에 분사하는 제3가스분사부를 포함하는 기판처리장치 및 기판처리방법에 관한 것이다.
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