Processing

Please wait...

Settings

Settings

Goto Application

1. WO2020057894 - PARTICLE BEAM APPARATUS, DEFECT REPAIR METHOD, LITHOGRAPHIC EXPOSURE PROCESS AND LITHOGRAPHIC SYSTEM

Publication Number WO/2020/057894
Publication Date 26.03.2020
International Application No. PCT/EP2019/072489
International Filing Date 22.08.2019
IPC
G03F 7/20 2006.01
GPHYSICS
03PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
FPHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
7Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printed surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
20Exposure; Apparatus therefor
CPC
G03F 7/2026
GPHYSICS
03PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
FPHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR;
7Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
20Exposure; Apparatus therefor
2022Multi-step exposure, e.g. hybrid; backside exposure; blanket exposure, e.g. for image reversal; edge exposure, e.g. for edge bead removal; corrective exposure
2026for the removal of unwanted material, e.g. image or background correction
G03F 7/70383
GPHYSICS
03PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
FPHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR;
7Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
70Exposure apparatus for microlithography
70375Imaging systems not otherwise provided for, e.g. multiphoton lithography; Imaging systems comprising means for converting one type of radiation into another type of radiation, systems comprising mask with photo-cathode
70383Direct write, i.e. pattern is written directly without the use of a mask by one or multiple beams
G03F 7/7065
GPHYSICS
03PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
FPHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR;
7Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
70Exposure apparatus for microlithography
70483Information management, control, testing, and wafer monitoring, e.g. pattern monitoring
70616Wafer pattern monitoring, i.e. measuring printed patterns or the aerial image at the wafer plane
7065Defect inspection
Applicants
  • ASML NETHERLANDS B.V. [NL]/[NL]
Inventors
  • MAAS, Ruben, Cornelis
  • POLYAKOV, Alexey, Olegovich
  • COENEN, Teis, Johan
Agents
  • PETERS, John Antoine
Priority Data
18195475.119.09.2018EP
Publication Language English (EN)
Filing Language English (EN)
Designated States
Title
(EN) PARTICLE BEAM APPARATUS, DEFECT REPAIR METHOD, LITHOGRAPHIC EXPOSURE PROCESS AND LITHOGRAPHIC SYSTEM
(FR) APPAREIL À FAISCEAU DE PARTICULES, PROCÉDÉ DE RÉPARATION DE DÉFAUT, PROCESSUS D'EXPOSITION LITHOGRAPHIQUE ET SYSTÈME LITHOGRAPHIQUE
Abstract
(EN)
A particle beam apparatus is described, the apparatus comprising: - an object table configured to hold a semiconductor substrate; - a particle beam source configured to generate a particle beam; - a detector configured to detect a response of the substrate caused by interaction of the particle beam with the substrate and to output a detector signal representative of the response; - a processing unit configured to: receive or determine a location of one or more defect target areas on the substrate; control the particle beam source to inspect the one or more defect target areas; identify one or more defects within the one or more defect target areas, based on the detector signal obtained during the inspection of the one or more defect target areas; control the particle beam source to repair the one or more defects.
(FR)
L'invention concerne un appareil à faisceau de particules, l'appareil comprenant: une table pour objet configurée pour maintenir un substrat semi-conducteur; une source de faisceau de particules configurée pour générer un faisceau de particules; un détecteur configuré pour détecter une réponse du substrat provoquée par l'interaction du faisceau de particules avec le substrat, et pour émettre un signal de détecteur représentatif de la réponse; une unité de traitement configurée pour: recevoir ou déterminer un emplacement d'une ou de plusieurs zones cibles de défaut sur le substrat; commander la source de faisceau de particules pour inspecter la ou les zones cibles de défaut; identifier un ou plusieurs défauts dans la ou les zones cibles de défaut, sur la base du signal de détecteur obtenu pendant l'inspection de la ou des zones cibles de défaut; commander la source de faisceau de particules pour réparer le ou les défauts.
Also published as
Latest bibliographic data on file with the International Bureau