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1. WO2019243882 - SEMICONDUCTOR STRUCTURE ENHANCED FOR HIGH VOLTAGE APPLICATIONS

Publication Number WO/2019/243882
Publication Date 26.12.2019
International Application No. PCT/IB2019/000515
International Filing Date 19.06.2019
IPC
H01L 27/02 2006.01
HELECTRICITY
01BASIC ELECTRIC ELEMENTS
LSEMICONDUCTOR DEVICES; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
27Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
02including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having at least one potential-jump barrier or surface barrier; including integrated passive circuit elements with at least one potential-jump barrier or surface barrier
H01L 29/94 2006.01
HELECTRICITY
01BASIC ELECTRIC ELEMENTS
LSEMICONDUCTOR DEVICES; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
29Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having at least one potential-jump barrier or surface barrier; Capacitors or resistors with at least one potential-jump barrier or surface barrier, e.g. PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof
66Types of semiconductor device
86controllable only by variation of the electric current supplied, or only the electric potential applied, to one or more of the electrodes carrying the current to be rectified, amplified, oscillated, or switched
92Capacitors with potential-jump barrier or surface barrier
94Metal-insulator-semiconductors, e.g. MOS
H01L 49/02 2006.01
HELECTRICITY
01BASIC ELECTRIC ELEMENTS
LSEMICONDUCTOR DEVICES; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
49Solid state devices not provided for in groups H01L27/-H01L47/99; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof
02Thin-film or thick-film devices
CPC
H01L 27/0207
HELECTRICITY
01BASIC ELECTRIC ELEMENTS
LSEMICONDUCTOR DEVICES; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
27Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
02including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having at least one potential-jump barrier or surface barrier; including integrated passive circuit elements with at least one potential-jump barrier or surface barrier
0203Particular design considerations for integrated circuits
0207Geometrical layout of the components, e.g. computer aided design; custom LSI, semi-custom LSI, standard cell technique
H01L 28/90
HELECTRICITY
01BASIC ELECTRIC ELEMENTS
LSEMICONDUCTOR DEVICES; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
28Passive two-terminal components without a potential-jump or surface barrier for integrated circuits; Details thereof; Multistep manufacturing processes therefor
40Capacitors
60Electrodes
82with an enlarged surface, e.g. formed by texturisation
90having vertical extensions
H01L 29/94
HELECTRICITY
01BASIC ELECTRIC ELEMENTS
LSEMICONDUCTOR DEVICES; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
29Semiconductor devices adapted for rectifying, amplifying, oscillating or switching, or capacitors or resistors with at least one potential-jump barrier or surface barrier, e.g. PN junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof; ; Multistep manufacturing processes therefor
66Types of semiconductor device ; ; Multistep manufacturing processes therefor
86controllable only by variation of the electric current supplied, or only the electric potential applied, to one or more of the electrodes carrying the current to be rectified, amplified, oscillated or switched
92Capacitors with potential-jump barrier or surface barrier
94Metal-insulator-semiconductors, e.g. MOS
Applicants
  • MURATA MANUFACTURING CO., LTD. [JP]/[JP]
Inventors
  • VOIRON, Frédéric
  • BUFFLE, Larry
Priority Data
18305789.221.06.2018EP
Publication Language English (EN)
Filing Language English (EN)
Designated States
Title
(EN) SEMICONDUCTOR STRUCTURE ENHANCED FOR HIGH VOLTAGE APPLICATIONS
(FR) STRUCTURE SEMI-CONDUCTRICE AMÉLIORÉE POUR DES APPLICATIONS HAUTE TENSION
Abstract
(EN)
A semiconductor structure enhanced for high-voltage applications is disclosed. The structure comprises a protruding wall structure, formed by etching a substrate, that extends from a base surface of the substrate. Corners of the protruding wall structure may be smoothed or rounded to reduce electrical stress within the structure. The protruding wall structure may be partitioned into multiple wall regions disposed along different directions of the substrate to reduce mechanical stress.
(FR)
L'invention concerne une structure semi-conductrice améliorée pour des applications à haute tension. La structure comprend une structure de paroi en saillie, formée par gravure d'un substrat, qui s'étend à partir d'une surface de base du substrat. Les coins de la structure de paroi en saillie peuvent être lisses ou arrondis pour réduire la contrainte électrique à l'intérieur de la structure. La structure de paroi en saillie peut être divisée en de multiples régions de paroi disposées le long de différentes directions du substrat pour réduire une contrainte mécanique.
Also published as
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